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Recent Developments in BSIM for CMOS RF ac and Noise Modeling

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Analog Circuit Design

Abstract

A major barrier to the successful realization of commercial CMOS RF communication systems is the relatively slow progress in the development of CMOS RF compact models. This paper reviews the recent activities of the B SIM development team in addressing this need. Both RF ac and noise models based on BSIM3v3 were proposed and evaluated with 2-D simulations and experimental data. Good agreement has been achieved in the GHz range. These models will enable the accurate simulations of new emerging CMOS RF LSI communication systems using SPICE.

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References

  1. P. Gray and R. Meyer, “Future directions of silicon IC’s for RF personal communications,” in CICC, pp. 83–90, May 1995.

    Google Scholar 

  2. F. Brianti et al.,“High integration CMOS RF transceivers,” in AACD,Lausanne-Ouchy, Switzerland, April 1996.

    Google Scholar 

  3. The National Technology Roadmap for Semiconductors,SIA, 1997.

    Google Scholar 

  4. J. Rudell et al.,“Recent developments in high integration multistandard CMOS transceivers for personal communication systems,” in Symp. Low Power Electronics,pp. 149–154, August 1998.

    Google Scholar 

  5. J. Rudell et al.,“A 1.9GHz wide-band IF double conversion CMOS integrated receiver for cordless telephone applications,” in ISSCC,pp. 304–305, February 1997.

    Google Scholar 

  6. A. Abidi et al.,“The future of CMOS wireless transceivers,” in ISSCC,pp. 118–119, February 1997.

    Google Scholar 

  7. D. Shaeffer et al.,“A 115mW CMOS GPS receiver,” in ISSCC,pp. 122–123, February 1998.

    Google Scholar 

  8. M. Steyaert et al.,“A single-chip CMOS transceiver for DCS-1800 wireless communications,” in ISSCC,pp. 48–49, February 1998.

    Google Scholar 

  9. P. Orsatti et al.,“A 20mA-receive 55mA-transmit GSM transceiver in 0.25µm CMOS,” in ISSCC,pp. 232–233, February 1999.

    Google Scholar 

  10. T. Cho et al.,“A single-chip CMOS direct-conversion transceiver for 900 MHz spread-spectrum digital cordless phones,” in ISSCC,pp. 228229, February 1999.

    Google Scholar 

  11. T. Manku, “Microwave CMOS–devices and circuits,” in CICC, pp. 59–66, May 1998.

    Google Scholar 

  12. W. Liu et al., BSIM3v3.2 MOSFET Model Users’ Manual,University of California, Berkeley, Memo. no. UCB/ERL M98/51, August 1998.

    Google Scholar 

  13. S-parameter Techniques for Faster, More Accurate Network Design, Hewlett Packard, Test and Measurement, Application Note 95–1.

    Google Scholar 

  14. ] W. Liu et al.,“RF MOSFET modeling accounting for distributed substrate and channel resistance with emphasis on the BSIM3v3 SPICE model,” in IEDM,pp. 309–312, December 1997.

    Google Scholar 

  15. D. Pehlke et al.,“High frequency application of MOS compact model and their development for scalable RF model libraries,” in CICC,pp. 219–222, May 1998.

    Google Scholar 

  16. J. Ou et al.,“CMOS RF modeling for GHz communication IC’s,” in VLSI Symp. Tech.,pp. 94–95, June 1998.

    Google Scholar 

  17. X. Jin et al.,“An effective gate resistance model for CMOS RF and noise modeling,” in IEDM,pp. 961–964, December 1998.

    Google Scholar 

  18. B. Razavi, R. Yan, and K Lee, “Impact of distributed gate resistance on the performance of MOS devices,” IEEE Trans. Circuits and Systems I, vol. 41, no. 11, pp. 750–754, November 1994.

    Article  Google Scholar 

  19. E. Abou-Allam and T. Manku, “A small-signal MOSFET model for radio frequency IC applications,” IEEE Trans. Computer-Aided Design, vol. 16, no. 5, pp. 437–447, May 1997.

    Article  Google Scholar 

  20. R. Gharpurey and R. Meyer, “Modeling and analysis of substrate coupling in integrated circuits,” IEEE J. Solid-State Circuits, vol. 31, no. 3, pp. 344–353, March 1996.

    Article  Google Scholar 

  21. L. Tiemeijer and D. Klaassen, “Geometry scaling of the substrate loss of RF MOSFETs,” in ESSDERC, pp. 480–483, September 1998.

    Google Scholar 

  22. G. Vendelin, A. Pavio, and U. Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques, New York: Wiley, 1990.

    Google Scholar 

  23. P. Gray and R. Meyer, Analysis and Design of Analog Integrated Circuits, 3rd edition, New York: Wiley, 1993.

    Google Scholar 

  24. A. Abidi, “High-frequency noise measurements on FET’s with small dimensions,” IEEE Trans. Electron Devices, vol. 33, no. 11, pp. 18011805, November 1986.

    Google Scholar 

  25. A. van der Ziel, Noise in Solid State Devices and Circuits, New York: Wiley, 1986.

    Google Scholar 

  26. D. Shaeffer and T. Lee, “A 1.5-V, 1.5-GHz CMOS low noise amplifier,” IEEE J. Solid-State Circuits, vol. 32, no. 5, May 1997.

    Google Scholar 

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© 1999 Springer Science+Business Media Dordrecht

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Ou, J.J., Jin, X., Gray, P.R., Hu, C. (1999). Recent Developments in BSIM for CMOS RF ac and Noise Modeling. In: Sansen, W., Huijsing, J., van de Plassche, R. (eds) Analog Circuit Design. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3047-0_8

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  • DOI: https://doi.org/10.1007/978-1-4757-3047-0_8

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-5101-4

  • Online ISBN: 978-1-4757-3047-0

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