Abstract
In leading edge VLSI technologies the exact knowledge of both the effective gate length Leff and the parasitic series resistance Rs are of utmost importance for process engineers to evaluate technological issues and for circuit designers to accurately predict circuit performance especially in analog applications. In this paper first the most important existing techniques and their error analysis will be presented. Then a more accurate technique especially for deep submicron technologies will be explained. Its advantages will be clearly illustrated.
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© 1999 Springer Science+Business Media Dordrecht
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De Meyer, K.M., Biesemans, S. (1999). Physics Based Accurate Extraction of LEFF and RS for Deep Submicron Mosfets. In: Sansen, W., Huijsing, J., van de Plassche, R. (eds) Analog Circuit Design. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3047-0_7
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DOI: https://doi.org/10.1007/978-1-4757-3047-0_7
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5101-4
Online ISBN: 978-1-4757-3047-0
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