Microwave Noise Modeling of CMOS Transistors

  • Tajinder Manku


In this paper we systematically develop an understanding of the noise behavior within MOS devices operating at microwave frequencies. A bottom to top approach is taken to accomplish this — device physics to network modeling to device layout. Our hope is that the results within this paper will provide RF CMOS circuit designers with a better understanding of the noise properties of MOS devices as well as to help them design better low noise amplifiers and mixers.


Solid State Circuit Current Gain Channel Device Optimum Noise Finger Width 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    L. E. Larson, “Integrated Circuit Technology Options for RFIC’s — Present status and future directions,” IEEE J. of Solid State Circuits, vol. 33, pp. 387–399, 1998.CrossRefGoogle Scholar
  2. [2]
    A. A. Abidi, “Low-power radio-frequency IC’s for portable communications,” Proc. of IEEE, vol. 83, no. 4, pp. 544–569, April 1995.CrossRefGoogle Scholar
  3. [3]
    T. Manku, “Microwave CMOS — Device Design and Physics,” IEEE J. of Solid State Circuits, in print, March 1999.Google Scholar
  4. [4]
    Qiuting Huang, Francesco Piazza, Paolo Orsatti, and Tatsuya Ohguro, “The impact of scaling down to deep submicron on CMOS RF Circuits,” IEEE J. Solid State Circuits, Vol. 33, pp. 1023–1036.Google Scholar
  5. [5]
    S. P. Voinigescu, S. W. Tarasewicz, T. MacElwee, and J. Ilowski, “An assessment of the state-of-the-art 0.5µm bulk CMOS technolog for RF applications,” Proc. IEEE International Electron Devices Meeting, pp. 721–724, 1995.Google Scholar
  6. [6]
    T. Ohguro, H. Naruse, H. Sugaya, E. Moriguji, S. Nakamura, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, and H. Iwai, “0.18µm low voltage/low power RF CMOS with zero Vth analog MOSFET’s made by undoped epitaxial channel technique,” IEEE International Electron Device Meeting, December, pp. 837–840, 1997.Google Scholar
  7. [7]
    H. S. Momose, F. Morifuji, T. Yoshitomi, T. Ohguro, M. Saito, T. Morimoto, Y. Katsuma, H. Iwai, “High frequency AC characteristics of 1.5nm gate oxide MOSFET,” Proc. IEEE International Electron Device Meeting, December, pp. 105–108, 1996.Google Scholar
  8. [8]
    R. R. J. Vanoppen, L. M. F. de Maaijer, D. B. M. Klaassen, and F. F. Tiemeijer, “RF Noise Modelling of 0.25µm CMOS and Low Power LNAs,” IEEE International Electron Device Meeting, December, pp. 317–320, 1997.Google Scholar
  9. [9]
    A. A. Abidi, “High frequency noise measurement on FET’s with small dimensions,” IEEE Trans. on Electron Devices, vol. 33, pp. 1801–1805, 1986.CrossRefGoogle Scholar
  10. [10]
    D. K. Shaeffer and T. H. Lee, “A 1.5V, 1.5GHz CMOS low noise amplifier,” IEEE J. of Solid State Circuits, vol. 32, no. 5, pp. 745–759, May 1997.CrossRefGoogle Scholar
  11. [11]
    Qiuting Huang, Paolo Orsatti, and Francesco Piazza, “Broadband, 0.251.tm CMOS LNAs with Sub-2dB NF for GSM Applications,” IEEE 1998 Custom Integrated Circuits Conference, pp. 67–70, 1998.Google Scholar
  12. [12]
    A. Rofougaran, G. Chang, J. J. Rael, J. Y. C. Chang, M. Rofougaran, P. J. Chang, M. Djafari, J. Min, E. Roth, A. A. Abidi, and H. Samueli, “A single-chip 900MHz spread-spectrum wireless transceiver in 11..tm CMOS Part II: receiver design,” IEEE J. of Solid State Circuits, vol. 33, pp. 535–547, 1998.CrossRefGoogle Scholar
  13. [13]
    J. Crois and M. S. J. Steyaert, “A single-chip 900MHz CMOS receiver front-end high performance low-IF topology,” IEEE J. of Solid State Circuits, vol. 30, no. 12, pp. 1483–1492, December 1995.CrossRefGoogle Scholar
  14. [14]
    Yi Lin, Lan Wang, Michael Obrecht, and Tajinder Manku, “Quasi 3D Device simulations for the microwave characterization of MOS devices,” Technical Digest of IEEE International Electron Device Meeting, pp. 77–80, 1998.Google Scholar
  15. [15]
    T. Manku, M. Obrecht, and Y. Lin,“RF simulations and physics of the channel noise parameters with MOS transistors,” IEEE Custom Integrated Circuit Conference, in print, 1999.Google Scholar
  16. [16]
    A. Van der Ziel, Noise in Solid State Devices and Circuits, New York, Wiley, 1986.Google Scholar
  17. [17]
    J. Michael Golio, Microwave MESFET’s & HEMT’s, Artect House, Boston, 1991.Google Scholar
  18. [18]
    Ronald R. Troutman, “VLSI limitations from Drain-Induced Barrier Lowering,” IEEE J. of Solid State Circuits, vol. 14, pp. 365–391, 1979.CrossRefGoogle Scholar
  19. [19]
    Y. P. Tsividis, Operation and modeling of the MOS transistor, McGraw Hill, 1987.Google Scholar
  20. [20]
    E. Abou-Allam and T. Manku, “A small signal MOSFET model for radio frequency IC applications,” IEEE Trans. on CAD of Integrated Circuits and System, pp. 437–447, May 1997.Google Scholar
  21. [21]
    G. Gonzalez, Microwave Transistor Amplifiers and Analysis and Design, Prentice Hall, 1997.Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • Tajinder Manku
    • 1
  1. 1.RF Technology GroupUniversity of WaterlooWaterlooCanada

Personalised recommendations