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Substrate noise characteristics and propagation

  • Xavier Aragonès
  • José Luis González
  • Antonio Rubio
Chapter

Abstract

This chapter contains an exhaustive attempt to reveal the elementary characteristics of substrate coupling. The aim of this part is to determine how coupling is affected by factors such as the type of wafer, the type of coupled devices, the biasing of these devices, and layout and technology parameters.

The chapter starts with a description of the mechanisms by which circuit nodes interact with the substrate. Next, the way device characteristics layout and technology parameters, device type and biasing- affect coupling is studied with device simulations and experimental measurements. Lastly, we analyze the way noise propagation is affected by the substrate type or particular biasing, assuming ideal grounding conditions. In following chapters the consequences of non-ideal supplies on the results obtained will be analyzed.

Keywords

Bipolar Transistor NMOS Transistor Guard Ring Return Path Sensitive Device 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1999

Authors and Affiliations

  • Xavier Aragonès
    • 1
  • José Luis González
    • 1
  • Antonio Rubio
    • 1
  1. 1.Universitat Politècnica de Catalunya (UPC)Spain

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