Abstract
Today’s VLSI electronic technology allows complex mixed-mode circuits to be integrated in a single silicon die, with high speed digital circuits fitted alongside high performance analog sections. Noise immunity has been one of the classical drawbacks of analog circuits as opposed to digital ones. In the last few years, the resolution demanded of such circuits has increased because of the need to process very low level signals and through the increasing quality demanded in audio or video communications. Analog circuit designers traditionally had to deal with noise sources related with devices, mainly thermal, shot and flicker (1/f) noise [I]. The trends in microelectronics are nevertheless heading towards integrating full systems in a single chip, including analog and digital parts. This fact makes device noise no longer the main source of noise affecting analog circuitry, this being instead the disturbances that digital circuitry induces over the analog part. The problem is made worse because of the increasing density of integration and the growing speed of digital circuits, which make the noise produced larger and larger.
Coupling problems have become a limiting factor in the performance of many advanced circuits. This has brought about a need for research in the field, in order to find the way all these effects are produced, and what can be done to avoid them. This book focuses on the analysis of coupling mechanisms, specifically noise coupled through the silicon substrate shared by analog and digital circuitry in a mixed-signal IC due to dV/dt as well as on the parasitic coupling through packaging due to dl/dt. This introductory chapter contains a review of the state of the art in microelectronics, to look at its evolution and thus understand the factors which lead to the aforementioned situation
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Aragonès, X., González, J.L., Rubio, A. (1999). Introduction. In: Analysis and Solutions for Switching Noise Coupling in Mixed-Signal ICs. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3013-5_1
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DOI: https://doi.org/10.1007/978-1-4757-3013-5_1
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