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Realizations

  • Klaas-Jan de Langen
  • Johan H. Huijsing
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 520)

Abstract

Now that we have discussed all the main overall parameters, it is time to consider actual amplifier implementations in more detail. The amplifier topologies are described in subsequent sections classified according to the applied technology. In section 5.2 bipolar amplifier topologies are discussed: we will see that bipolar amplifiers due to the availability of the high performance NPN transistor, are very suited for wideband circuits and for amplifiers with high output current capability. Amplifiers that are suited for VLSI are presented in section 5.3. These CMOS amplifiers are very compact, making the best of a simple two-stage topology while being able to operate at low supply voltages. At extremely low supply voltages, however, three stages are required yielding a compact ultra-low-voltage design. The final group of amplifiers employs the possibilities of BiCMOS technology yielding powerful combinations of the previous discussed topologies. BiCMOS topologies are presented in section 5.4. Finally, conlusions are drawn in section 5.5.

Keywords

Bias Current Operational Amplifier Output Stage Current Mirror Input Stage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1999

Authors and Affiliations

  • Klaas-Jan de Langen
    • 1
  • Johan H. Huijsing
    • 2
  1. 1.Philips Semiconductors, Inc.SunnyvaleUSA
  2. 2.Delft University of TechnologyThe Netherlands

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