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Design Considerations for GaAs MESFET RF Power Amplifiers

  • Stewart S. Taylor

Abstract

Practical aspects of low-voltage, 1–3 watt RF power amplifiers for wireless phones will be presented, particularly as they relate to GaAs MESFET integrated circuits. Device, package, and circuit approaches will be reviewed. Typical performance of GaAs MESFET power amplifiers for 840MHz cellular AMPS & TDMA, 1900MHz PCS TDMA, and DCS 1800 will be presented.

Keywords

Power Amplifier Bias Current Output Stage Match Network Wireless Phone 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • Stewart S. Taylor
    • 1
  1. 1.TriQuint SemiconductorHillsboroUSA

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