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Radio Transceiver Circuits in Silicon Germanium

  • Jan Sevenhans
  • Bart Verstraeten

Abstract

In this paper some basic aspects of RF-bipolar and Silicium Germanium technológy are described to indicate the determining factors that have allowed the succes of Silicon in the GHz range wireless applications. In addition the basic circuits are discussed for the low voltage design of a single chip cellular transceiver. Also preliminary measurement results of a realization in a 50 GHz Silicon Germanium technology are shown for the receiver and the transmitter section of the single chip transceiver first silicon with an integrated VCO. The circuits operate on a 2.7 to 3.6 Volt battery.

Keywords

Phase Noise Local Oscillator Differential Pair Base Band Silicon Germanium 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. (1).
    M. McDonald, “ A 2.5 GHz Bicmos Image-Reject Front End,” ISSCC Digest of technical papers, pp. 144-145, Feb., 1993.Google Scholar
  2. (2).
    J. Crols, M. Steyaert, “A Fully integrated 900MHz CMOS Double Quadrature Downconverter,” ISSCC Digest of technical papers, pp. 136-137, Feb., 1995.Google Scholar
  3. (3).
    C.D. Hull, R.R. Chu, J.L. Tham, “A Direct conversion receiver for 900MHz spread spectrum Digital cordless telephone,” ISSCC Digest of technical papers, pp. 344-345, Feb., 1996.Google Scholar
  4. (4).
    J. Craninck, M. Steyaert, “A 1.8 GHz Low-Phase-Noise Spiral-LC CMOS VCO,” Symposium on VLSI circuits Digest of technical papers, pp. 30-31, June 1996.Google Scholar
  5. (5).
    Tsuneo Tsukahara, Masayuki Ishikawa, Masahiro Muraguchi, “A 2V GHz Si-bipolar Direct Conversion Modulator,” ISSCC Digest of technical papers, pp. 40-41, Feb., 1994.Google Scholar
  6. (6).
    Asad Abidi, “Direct Conversion Radio Transceivers for Digital Communications,”ISSCC Digest of technical papers, pp. 186-187,363-364, Feb., 1995.Google Scholar
  7. (7).
    Jan Craninckx, M. Steyaert, “A 1.8Ghz Low-Phase Noise CMOS VCO Using Optimized Hollow Spiral Inductors,” IEEE J. Solid state Circuits, May 1997, pp. 736-744.Google Scholar
  8. (8).
    Jurgen Arndt, TEMIC, Heilbronn, For sharing some of his experience and material on Silicon Germanium technology.Google Scholar
  9. (9).
    John D. Cressler, “Silicon Germanium Heterojunction Bipolar Technology: The Next Leap in Silicon?”, ISSCC Digest of technical papers, pp. 24-27, Feb. 1994.Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • Jan Sevenhans
    • 1
  • Bart Verstraeten
    • 1
  1. 1.Alcatel BellAntwerpenBelgium

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