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The SOI MOSFET Operating in a Harsh Environment

  • Jean-Pierre Colinge

Abstract

SOI MOSFETs present several properties which allow them to operate in harsh environments where bulk devices would typically fail from operating satisfactorily. These interesting properties of the SOI MOSFETs are due to the small volume of silicon in which the devices are made, to the small area of the source-body and drain-body junctions, and to the presence of a back gate. In this Chapter, we will describe the behavior of the SOI MOSFET operating in two cases of extreme environments: the exposure to radiations and high-temperature operation.

Keywords

Linear Energy Transfer Gate Oxide Bipolar Transistor Depletion Zone Oxide Charge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    G.C. Messenger and M.S. Ash, The Effects of Radiation on Electronic Systems, Van Nostrand Reinhold Company, New York, 1986Google Scholar
  2. 2.
    J. R. Schwank, Short course on Silicon-on-Insulator circuits, IEEE International SOI Conference, p. 5. 1, 1996Google Scholar
  3. 3.
    J. Olsen, P.E. Becher, P.B. Fynbo, P. Raaby, and J. Schultz, IEEE Transactions on Nuclear Science, Vol. 40, No. 2, p. 74, 1993CrossRefGoogle Scholar
  4. 4.
    G.C. Messenger and M.S. Ash, The Effects of Radiation on Electronic Systems, Van Nostrand Reinhold Company, New York, 1986, p. 307Google Scholar
  5. 5.
    J. R. Schwank, Short course on Silicon-on-Insulator circuits, IEEE International SOI Conference, p. 5. 1, 1996Google Scholar
  6. 6.
    Y. Song, K.N. Vu, J.S. Cable, A.A. Witteles, W.A. Kolasinski, R. Koga, J.H. Elder, J. VO. Osborn, R.C. Martin, and N.M. Ghoniem, IEEE Transactions on Nuclear Science, Vol. 35, No. 6, p. 1673, 1988CrossRefGoogle Scholar
  7. 7.
    O. Musseau, F. Gardic, P. Roche, T. Corbière, R.A. Reed, S. Buchner, P. McDonald, J. Melinger, and A.B. Campbell, IEEE Transactions on Nuclear Science, Vol. 43, No. 6, p. 2879, 1996CrossRefGoogle Scholar
  8. 8.
    J.L. Leray, Microelectronics Engineering, Vol. 8, p. 187, 1988CrossRefGoogle Scholar
  9. 9.
    E. Normand, IEEE Nuclear and Space Radiation Effects Conference Short Course on Radiation Effects in Commercial Electronics, p. V - 1, 1994Google Scholar
  10. 10.
    G.E.Davis, L.R. Hite, T.G.W. Blake, C.E. Chen, H.W. Lam, R. DeMoyer, IEEE Trans. on Nuclear Science, Vol. 32, p. 4432, 1985Google Scholar
  11. 11.
    J.L. Leray, E. Dupont-Nivet, O. Musseau, Y.M. Coïc, A. Umbert, P. Lalande, J.F. Péré, A.J. Auberton-Hervé, M. Bruel, C. Jaussaud, J. Margail, B. Giffard, R. Truche, and F. Martin, IEEE Trans. on Nuclear Science, Vol. 35, p. 1355, 1988CrossRefGoogle Scholar
  12. 13.
    L.W. Massengill, D.V. Kerns, Jr., S. E. Kerns, and M.L. Alles, IEEE Electron Device Letters, Vol. 11, p. 98, 1990CrossRefGoogle Scholar
  13. 14.
    Y. Tosaka, K. Suzuki, and T. Sugii, Technical Paper Digest of the Symposium on VLSI Technology, p. 29, 1995Google Scholar
  14. 15.
    G.E. Davis, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 317, 1988Google Scholar
  15. 16.
    J. R. Schwank, Short course on Silicon-on-Insulator circuits, IEEE International SOI Conference, p. 5. 1, 1996Google Scholar
  16. 17.
    P.V. Dressendorfer and A. Ochoa, IEEE Transactions on Nuclear Science, Vol. 28, p. 4288, 1981CrossRefGoogle Scholar
  17. 18.
    M. Allenspach, C. Dachs, G.H. Johnson, R.D. Schrimpf, E. Lorfèvre, J.M. Palau, J.R. Brews, K.F. Galloway, J.L. Titus, and C.F. Wheatley, IEEE Transactions on Nuclear Science, Vol. 43, No. 6, p. 2927, 1996CrossRefGoogle Scholar
  18. 19.
    J. R. Schwank, Short course on Silicon-on-Insulator circuits, IEEE International SOI Conference, p. 5. 1, 1996Google Scholar
  19. 20.
    T.F. Wrobel, FG.N. Coppage, G.L. Hash, and A.J. Smith, IEEE Transactions on Nuclear Science, Vol. 32, p. 3991, 1985CrossRefGoogle Scholar
  20. 21.
    G.H. Johnson, R.D. Schrimpf, and K.F. Galloway, IEEE Transactions on Nuclear Science, Vol. 39, p. 1605, 1992CrossRefGoogle Scholar
  21. 22.
    J.W. Adolphsen, J.L. Barth, and G.B. Gee, IEEE Transactions on Nuclear Science, Vol. 43, No. 6, p. 2921, 1996CrossRefGoogle Scholar
  22. 23.
    C.F. Wheatley, J.L. Titus, D.I. Burton, and D.R. Carley, IEEE Transactions on Nuclear Science, Vol. 43, No. 6, p. 294, 1996CrossRefGoogle Scholar
  23. 24.
    T.F. Wrobel, IEEE Transactions on Nuclear Science, Vol. 34, p. 1262, 1987CrossRefGoogle Scholar
  24. 25.
    J. R. Schwank, Short course on Silicon-on-Insulator circuits, IEEE International SOI Conference, p. 5. 1, 1996Google Scholar
  25. 26.
  26. 27.
    J. Gautier and A.J. Auberton-Hervé, IEEE Electron Device Letters, Vol. 12, p. 372, 1991CrossRefGoogle Scholar
  27. 28.
    O. Musseau, IEEE Transactions on Nuclear Science, Vol. 43, p. 603, 1996CrossRefGoogle Scholar
  28. 29.
    J.L. Leray, Microelectronics Engineering, Vol. 8, p. 187, 1988CrossRefGoogle Scholar
  29. 30.
    F. Wulf, D. Braunig, and A. Boden, ECFA STUDY WEEK on Instrumentation Technology for High-Luminosity Hadron Colliders, Ed. by E. Fernands and G. Jarlskog, Proc. Vol. 1, p. 109, 1989Google Scholar
  30. 31.
    J.L. Leray, E. Dupont-Nivet, J.F. Péré, Y.M. Coïc, M. Raffaelli, A.J. Auberton-Hervé, M. Bruel, B. Giffard, and J. Margail, IEEE Transactions on Nuclear Science, Vol. 37, No. 6, p. 2013, 1990CrossRefGoogle Scholar
  31. 32.
    J.L. Leray, E. Dupont-Nivet, J.F. Péré, O. Musseau, P. Lalande, and A. Umbert, Proceedings SOS/SOI Technology Workshop, p. 114, 1989Google Scholar
  32. 33.
    D.M. Fletwood, IEEE Transactions on Nuclear Science, Vol. 39, p. 269, 1992CrossRefGoogle Scholar
  33. 34.
    D.M. Fletwood, S.S. Tsao, and P.S. Winokur, IEEE Trans. on Nuclear Science, Vol.35, p. 1361, 1988Google Scholar
  34. 35.
    G.C. Messenger and M.S. Ash, The Effects of Radiation on Electronic Systems, Van Nostrand Reinhold Company, New York, 1986, p. 243Google Scholar
  35. 36.
    J.L. Leray, E. Dupont-Nivet, O. Musseau, Y.M. Coïc, A. Umbert, P. Lalande, J.F. Péré, A.J. Auberton-Hervé, M. Bruel, C. Jaussaud, J. Margail, B. Giffard, R. Truche, and F. Martin, IEEE Trans. on Nuclear Science, Vol. 35, p. 1355, 1988CrossRefGoogle Scholar
  36. 38.
    V. Ferlet-Cavrois, O. Musseau, J.L. Leray, J.L. Pelloie, and C. Raynaud, IEEE Transactions on Electron Devices, Vol. 44, No. 6, p. 965, 1997CrossRefGoogle Scholar
  37. 39.
    G.E. Davis, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 317, 1988Google Scholar
  38. 40.
    G.C. Messenger and M.S. Ash, The Effects of Radiation on Electronic Systems, Van Nostrand Reinhold Company, New York, 1986, p. 267Google Scholar
  39. 41.
    W.A. Krull and J.C. Lee, Proceedings IEEE SOS/SOI Technology Workshop, p. 69, 1988Google Scholar
  40. 42.
    W.P. Maszara, Proc. of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 199, 1990Google Scholar
  41. 43.
    S.M. Sze, Physics of Semiconductor Devices, 2nd Edition, J. Wiley and Sons Eds, p. 91, 1981Google Scholar
  42. 44.
    D.P. Vu, M.J. Boden, W.R. Henderson, N.K. Cheong, P.M. Zavaracky, D.A. Adams, and M.M. Austin, Proceedings IEEE SOS/SOI Technology Conference, p. 165, 1989Google Scholar
  43. 45.
    T.E. Rudenko, V.I. Kilchitskaya, and A.N. Rudenko, Microelectronic Engineering, Vol. 36, No. 1–4, p. 367, 1997CrossRefGoogle Scholar
  44. 46.
    D. Flandre, in High-Temperature Electronics Ed. by. K. Fricke and V. Krozer, Materials Science and Engineering, Elsevier, Vol. B29, p. 7, 1995Google Scholar
  45. 47.
    R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, 2nd Edition, J. Wiley and Sons Eds, p. 56, 1986Google Scholar
  46. 48.
    G. Groeseneken, J.P. Colinge, H.E. Maes, J.C. Alderman and S. Holt, IEEE Electron Device Letters, Vol. 11, p. 329, 1990CrossRefGoogle Scholar
  47. 49.
    P. Francis, A. Terao, B. Gentinne, D. Flandre, JP Colinge, Technical Digest of IEDM, p. 353, 1992Google Scholar

Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.Université catholique de LouvainBelgium

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