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Abstract

Complementary MOS (CMOS) is, by far, the technology of choice for the realization of integrated circuits on SOI substrates. This Chapter will compare CMOS processing on bulk silicon and on SOI wafers. Processing of both thin and thicker SOI films will be discussed. We will assume that circuit processing is carried out on commercially available substrates, such as SIMOX wafers. It is worthwhile keeping in mind that, unlike in the case of SOS, SOI wafers contain only silicon and silicon dioxide, and that the appearance of SOI wafers is very similar to that of bulk silicon wafers. As a consequence, SOI circuit processing can be carried out in standard bulk silicon processing lines. Mixed batches (containing both bulk and SOI substrates) can be processed as well.

Keywords

Threshold Voltage Gate Oxide Silicon Film Doping Profile Subthreshold Slope 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.Université catholique de LouvainBelgium

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