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Abstract

Many techniques have been developed for producing a film of single-crystal silicon on top of an insulator. Some of them are based on the epitaxial growth of silicon on either a silicon wafer covered with an insulator (homoepitaxial techniques) or on a crystalline insulator (heteroepitaxial techniques). Other techniques are based on the crystallization of a thin silicon layer from the melt (laser recrystallization, e-beam recrystallization and zone-melting recrystallization). Silicon-on-insulator material can also be produced from a bulk silicon wafer by isolating a thin silicon layer from the substrate through the formation and oxidation of porous silicon (FIPOS) or through the ion beam synthesis of a buried insulator layer (SIMOX, SIMNI and SIMON). Finally, SOI material can be obtained by thinning a silicon wafer bonded to an insulator and a mechanical substrate (wafer bonding, BESOI). Every approach has its advantages and its pitfalls, and the type of application to which the SOI material is destined dictates the material to be used in each particular case. SIMOX, and UNIBOND® materials for instance, seem to be ideal candidates for VLSI CMOS applications, while wafer bonding is more adapted to bipolar and power applications. This Chapter will review the different techniques used for producing SOI material.

Keywords

Porous Silicon Silicon Film Porous Silicon Layer Molten Silicon Epitaxial Lateral Overgrowth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.Université catholique de LouvainBelgium

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