The idea of realizing semiconductor devices in a thin silicon film is mechanically supported by an insulating substrate has been around for several decades. The first description of the insulated-gate field-effect transistor (IGFET), which evolved into the modern silicon metal-oxide-semiconductor field-effect transistor (MOSFET), is found in the historical patent of Lilienfield dating from 1926 . This patent depicts a three-terminal device where the source-to-drain current is controlled by a field effect from a gate, dielectrically insulated from the rest of the device. The piece of semiconductor which constituted the active part of the device was a thin semiconductor film deposited on an insulator. In a sense, it can thus be said that the first MOSFET was a Semiconductor-onInsulator (SOI) device. The technology of that time was unfortunately unable to produce a successfully operating Lilienfield device. IGFET technology was then forgotten for a while, completely overshadowed by the enormous success of the bipolar transistor discovered in 1947 .
KeywordsParasitic Capacitance Bipolar Transistor Thin Silicon Film CMOS Inverter Thin Semiconductor Film
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