A Numerical Large Signal Model for the Heterojunction Bipolar Transistor
This model is intended to simulate the large signal performance of HBT‘s for use in high power, high frequency, oscillators, amplifiers, and mixers. A temperature model which includes velocity overshoot and carrier energy effects has been developed. As an example of the model’s effectiveness, an HBT embedded in a simple circuit is simulated. Comparisons between DC and RF results are made.
KeywordsElectron Temperature Terminal Voltage Heterojunction Bipolar Transistor Collector Voltage Valley Conduction Band
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- P. Sandborn, et al. “Quasi-Two-Dimensional Modeling of GaAs MES-FET’s,” IEEE Trans. Electron Devices, May 1987, pp. 985–991.Google Scholar
- J. Sutherland & J. Hauser, “A Computer Analysis of Heterojunction and Graded Composition Solar Cells,” IEEE Trans Electron Devices, April, 1977, pp. 363–372.Google Scholar
- D. C. McAndrew, et al, “A Consistent Nonisothermal Extension of the Scharfetter- Gummel Stable Difference Approximation,” IEEE Electron Device Letters, September, 1985, pp. 446–447.Google Scholar
- D. L. Scharfetter & H. K. Gummel, “Large-Signal Analysis of a Silicon Read Diode Oscillator,” IEEE Trans Electron Devices, January, 1969, pp. 64–77.Google Scholar
- H. Kroemer, “The Einstein Relation for Degenerate Carrier Concentrations,” IEEE Trans Electron Devices, July, 1978, p. 850.Google Scholar