Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Order Upwind Methods
The hydrodynamic model treats electron flow in a semiconductor device through the Euler equations of gas dynamics, with the addition of a heat conduction term. Thus the hydrodynamic model PDEs have hyperbolic, parabolic, and elliptic modes.
The nonlinear hyperbolic modes support shock waves. Numerical sim-ulations of a steady-state electron shock wave in a semiconductor device are presented, using steady-state second upwind and high-order time-dependent upwind methods. For the ballistic diode (which models the channel of a MOSFET), the shock wave is fully developed in Si (with a 1 volt bias) at 300 K for a 0.1 micron channel and at 77 K for a 1.0 micron channel.
KeywordsShock Wave Hydrodynamic Model Subsonic Flow Transonic Flow Laval Nozzle
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