Modeling InAs/GaSb/AlSb interband tunnel structures
We have implemented a simple model that allows realistic yet rapid simulation of conventional as well as interband resonant tunneling devices. Using this model we have studied InAs-GaSb-InAs broken-gap interband transmission devices and found that, despite the absence of classically forbidden barrier regions, a resonant tunneling process is involved in producing the observed negative differential resistance. Furthermore, we have found that maximum peak current densities should be found in devices with GaSb layer thicknesses corresponding to a single, rather than multiple, transmission resonance peak in the broken-gap region.
KeywordsTransmission Coefficient Resonant Tunneling Peak Current Density Doping Profile Valence Band Edge
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