Abstract
We performed Monte Carlo simulations taking into account all scattering mechanisms in InP and the presence of an inhomogeneous electric field. We report that: 1) the drifted Maxwellian distribution used in many publications is reliable only for long samples; 2) in addition to the boundary conditions at the cathode, the anode boundary condition becomes important in short devices; 3) Negative Differential Energy (NDE) occurs in the Negative Differential Conductivity (NDC) regime in InP (i.e. cooling of the electron gas by the electric field take place) ; 4) the critical electric field for NDE is somewhat higher than the critical electric field for NDC.
Keywords
- Electron Kinetic Energy
- Negative Differential Conductivity
- Device Length
- Perform Monte Carlo Simulation
- Critical Electric Field
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Mitin, V.V., Shaw, M.P., Ivastchenko, V.M., Wu, K.F. (1991). Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices. In: Hess, K., Leburton, J.P., Ravaioli, U. (eds) Computational Electronics. The Springer International Series in Engineering and Computer Science, vol 113. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2124-9_35
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DOI: https://doi.org/10.1007/978-1-4757-2124-9_35
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