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Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices

  • V. V. Mitin
  • M. P. Shaw
  • V. M. Ivastchenko
  • K. F. Wu
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

We performed Monte Carlo simulations taking into account all scattering mechanisms in InP and the presence of an inhomogeneous electric field. We report that: 1) the drifted Maxwellian distribution used in many publications is reliable only for long samples; 2) in addition to the boundary conditions at the cathode, the anode boundary condition becomes important in short devices; 3) Negative Differential Energy (NDE) occurs in the Negative Differential Conductivity (NDC) regime in InP (i.e. cooling of the electron gas by the electric field take place) ; 4) the critical electric field for NDE is somewhat higher than the critical electric field for NDC.

Keywords

Electron Kinetic Energy Negative Differential Conductivity Device Length Perform Monte Carlo Simulation Critical Electric Field 
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • V. V. Mitin
    • 1
    • 2
  • M. P. Shaw
    • 1
  • V. M. Ivastchenko
    • 2
  • K. F. Wu
    • 1
  1. 1.Dept. of Electrical and Comp. EngineeringWayne State UniversityDetroitUSA
  2. 2.Institute of Semiconductors of the UkrainianAcademy of SciencesKievUSSR

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