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Comparative Numerical Simulations of a GaAs Submicron FET using The Moments of the Boltzmann Transport and Monte Carlo Methods

  • J. P. Kreskovsky
  • G. A. Andrews
  • B. J. Morrison
  • H. L. Grubin
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

Numerical simulations of a submicron GaAs FET have been performed using both Monte Carlo (MC) methods and the Moments of the Boltzmann Transport Equation (MBTE). The I–V characteristics as well as details of the internal distribution of carriers and potential were obtained. The MC calculations show no regions or negative forward conductance. However, the MBTE results show that negative forward conductance can be present or absent depending on the value of the thermal conductivity.

Keywords

Monte Carlo Monte Carlo Calculation Gate Bias Computational Electronics Monte Carlo Result 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • J. P. Kreskovsky
    • 1
  • G. A. Andrews
    • 1
  • B. J. Morrison
    • 1
  • H. L. Grubin
    • 1
  1. 1.Scientific Research Associates, Inc.GlastonburyUSA

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