Field Assisted Impact Ionization in Semiconductors
We present a theory of the inverse Auger process (Impact Ionization) in semiconductors which expands an earlier theory of Kane and includes the effects of high electric fields on the electron-electron interaction. We show that this intracollisional field effect leads to a dramatic softening of the threshold energy for impact ionization.
KeywordsImpact Ionization High Electric Field Ionization Rate Auger Process Valence Band Electron
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- H. Shichijo, K. Hess, Phys. Rev. B23, 4197 (1981)Google Scholar