Simulation of Sub-Micron GaAs MESFETs for Microwave Control
Studying the scaling of microwave control MESFETs in the submicron regime cannot be done accurately using simplified models of electron transport such as drift-diffusion. Non-stationary effects need to be incorporated into the model, and this is most conveniently done by solving the semi-classical BTE. The use of the conventional Monte Carlo technique to solve the BTE suffers from a drawback in that the simulation needs to be run afresh for any change in the device geometry or bias conditions. Using such a technique to study device scaling may therefore be computationally demanding.
Based on the above considerations, our choice for a BTE solver is the Basis Function technique of Rees. This technique promises to be computationally efficient because it stores all scattering information for a given material in a pre-computed data-base. In this paper, we shall briefly describe the technique and its advantages, especially vis-a-vis the modeling of GaAs Control MESFETs in the “conducting state”. Some preliminary results of our numerical model for the “Local-effect” and “Flux” operators will also be discussed.
KeywordsInsertion Loss Boltzmann Transport Equation Transport Matrice Gunn Diode Momentum Spread
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