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Minority Electron Transport Across Submicron Layers of GaAs and InP

  • M. A. Osman
  • N. S. Dogan
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

The dynamics of transient transport of minority electrons injected into p+ doped submicron layers of GaAs and InP has been investigated using ensemble Monte Carlo method. It is found that the transit times of electrons across these layers are longer or shorter depending on the electric field strength and the width of the layers. For example the transit times across a 0.4 μm p + doped GaAs layers increases from 1.0 to 2.0 ps at 10 kV/cm electric field, while it decreases from about 3.0 to 2.0 ps at 50 kV/cm when the inelastic scattering of minority electrons by the hole plasma is taken into account. The calculations were also performed for InP and the results show the same trend.

Keywords

Transit Time Inelastic Scattering Computational Electronics Electron Drift Velocity Uniform Electric Field 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • M. A. Osman
    • 1
  • N. S. Dogan
    • 1
  1. 1.Department of Electrical and Computer EngineeringWashington State universityPullmanUSA

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