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Computer Experiments for High Electron Mobility Transistors and Avalanching Devices

  • Kevin F. Brennan
  • Yang Wang
  • Duke H. Park
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

The use of “computer experiments” to invent/ understand, or optimize semiconductor electronic devices is becoming increasingly important as the feature lengths of semiconductor devices approach the nanometer range. In such small device structures, highly nonlinear effects are known to arise, greatly complicating the description of these devices. The most general modeling approach entails numerical methods which are typically highly computationally intensive. We present a “computer experimental procedure” for modeling very small feature length devices which emphasize the use of built-in controls and an hierarchical approach. As a means of illustrating the usefulness of this technique, we present a series of calculations for both APDs and HEMTs.

Keywords

Gate Length Device Geometry Electron Simulation Excess Noise Factor General Modeling Approach 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Kevin F. Brennan
    • 1
  • Yang Wang
    • 1
  • Duke H. Park
    • 2
  1. 1.School of Electrical Engineering and Microelectronics Research CenterGeorgia Institute of TechnologyAtlantaUSA
  2. 2.Aerojet Electro-SystemsAzusaUSA

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