The DAMOCLES Monte Carlo Device Simulation Program
The DAMOCLES program (Device Analysis using Monte Carlo et Poisson solver) brings together an advanced Monte Carlo transport model where carriers move in a self-consistent electric field, and a flexible representation of the two-dimensional device geometry and doping. The result is a single simulation code capable of treating a multitude of device types (MOSFET, MESFET, Bipolar, HEMT) and semiconductors (electrons in Si, Ge, unstrained SiGe, GaAs, InP, A1As, InAs, GaP, AlGaAs, InGaAs, GaInP; holes in Si). An associated interactive graphics package facilitates the interpretation of the simulation results.
For purposes of this workshop, rather that dwell on our accomplishments and successes, we chose rather to summarize our work in the area of Monte Carlo device simulation, and then focus on some failures and work in progress.
KeywordsBipolar Transistor Device Simulation Boltzmann Transport Equation Velocity Overshoot Flexible Represen
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