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Dynamics of Photoexcited Carriers in GaAs

  • C. J. Stanton
  • D. W. Bailey
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

We present calculations of electron and hole dynamics after photoexcitation in GaAs. Electron, heavy, light, and split-off hole dynamics are determined by solving a set of coupled Boltzmann equations using an ensemble Monte Carlo method. A 30 ×3 0 k • p Hamiltonian is diagonalized to determine the hole band structure, optical matrix elements, density of states, and Bloch overlap factors. By comparing our results with 2-eV pump-continuum probe femtosecond nonlinear absorption experiments, we show that holes are an essential ingredient in the calculations.

Keywords

Laser Spectroscopy Nonlinear Absorption Heavy Hole Hole Band Effective Mass Approximation 
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • C. J. Stanton
    • 1
  • D. W. Bailey
    • 1
  1. 1.Department of PhysicsUniversity of FloridaGainesvilleUSA

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