Abstract
We present calculations of electron and hole dynamics after photoexcitation in GaAs. Electron, heavy, light, and split-off hole dynamics are determined by solving a set of coupled Boltzmann equations using an ensemble Monte Carlo method. A 30 ×3 0 k • p Hamiltonian is diagonalized to determine the hole band structure, optical matrix elements, density of states, and Bloch overlap factors. By comparing our results with 2-eV pump-continuum probe femtosecond nonlinear absorption experiments, we show that holes are an essential ingredient in the calculations.
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© 1991 Springer Science+Business Media New York
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Stanton, C.J., Bailey, D.W. (1991). Dynamics of Photoexcited Carriers in GaAs. In: Hess, K., Leburton, J.P., Ravaioli, U. (eds) Computational Electronics. The Springer International Series in Engineering and Computer Science, vol 113. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2124-9_15
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DOI: https://doi.org/10.1007/978-1-4757-2124-9_15
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