Dynamics of Photoexcited Carriers in GaAs
We present calculations of electron and hole dynamics after photoexcitation in GaAs. Electron, heavy, light, and split-off hole dynamics are determined by solving a set of coupled Boltzmann equations using an ensemble Monte Carlo method. A 30 ×3 0 k • p Hamiltonian is diagonalized to determine the hole band structure, optical matrix elements, density of states, and Bloch overlap factors. By comparing our results with 2-eV pump-continuum probe femtosecond nonlinear absorption experiments, we show that holes are an essential ingredient in the calculations.
KeywordsLaser Spectroscopy Nonlinear Absorption Heavy Hole Hole Band Effective Mass Approximation
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