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Ensemble Monte Carlo Simulation of Femtosecond Laser Excitation in Semiconductors

  • D. K. Ferry
  • A. M. Kriman
  • M. J. Kann
  • H. Hida
  • S. Yamaguchi
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

The ensemble Monte Carlo technique has become useful as a computational tool for simulating the excitation of electron-hole plasmas in semiconductors. In this paper, the use of this tool for the short-time regime is discussed. Here, the Coulomb interaction between electrons is simulated by a real-space molecular dynamics approach. The inclusion of the exchange interaction and finite collision duration is also discussed.

Keywords

Transition Rate Fermi Golden Rule Ensemble Monte Carlo Femtosecond Laser Excitation Intervalley Transition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • D. K. Ferry
    • 1
  • A. M. Kriman
    • 1
  • M. J. Kann
    • 1
  • H. Hida
    • 1
  • S. Yamaguchi
    • 1
  1. 1.Center for Solid State Electronics ResearchArizona State UniversityTempeUSA

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