A new two-dimensional self-consistent numerical model for HEMT is presented. In previous two-dimensional models, the quantization of electrons in the quantum well has been treated by using a triangular well approximation in which the width of the quantum well is assumed to be zero and the quantized electrons are assumed to reside right at the heterojunction. In this paper, we do not make the above assumptions. Instead, the spatial spreading of the electron concentration in the quantum well normal to the heterojunction is taken into account by solving Schrödinger’s and Poisson’s equations self-consistently.
Electron Concentration GaAs Layer Computational Electronics Spatial Spreading Bulk System
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