Abstract
A new two-dimensional self-consistent numerical model for HEMT is presented. In previous two-dimensional models, the quantization of electrons in the quantum well has been treated by using a triangular well approximation in which the width of the quantum well is assumed to be zero and the quantized electrons are assumed to reside right at the heterojunction. In this paper, we do not make the above assumptions. Instead, the spatial spreading of the electron concentration in the quantum well normal to the heterojunction is taken into account by solving Schrödinger’s and Poisson’s equations self-consistently.
This research was supported by the U.S. Army Research Office under ARO Grant No. DAAL 03–87–G–0004.
The authors would like to thank The National Center for Computational Electronics for providing partial funding for attending the Workshop on Computational Electronics held at Beckman Institute on May 21–23, 1990.
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References
D. J. Widiger, et. al., IEEE Trans. Electron Devices, vol. ED-32, 1092–1102, 1985.
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S. Ng, and R. Khoie, Submitted to: IEEE Trans. Electron Devices, May 1990.
The energy dependency of the transport parameters were provided by Dr. K. Hess of the National Center for Computational Electronics.
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© 1991 Springer Science+Business Media New York
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Ng, SH., Khoie, R., Venkat, R. (1991). A Self-Consistent Calculation of Spatial Spreading of the Quantum Well in HEMT. In: Hess, K., Leburton, J.P., Ravaioli, U. (eds) Computational Electronics. The Springer International Series in Engineering and Computer Science, vol 113. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-2124-9_10
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DOI: https://doi.org/10.1007/978-1-4757-2124-9_10
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