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SOI Materials

  • Jean-Pierre Colinge
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 132)

Abstract

Many techniques have been developed for producing a film of single-crystal silicon on top of an insulator. Some of them are based on the epitaxial growth of silicon on either a silicon wafer covered with an insulator (homoepitaxial techniques) or on a crystalline insulator (heteroepitaxial techniques). Other techniques are based on the crystallization of a thin silicon layer from the melt (laser recrystallization, e-beam recrystallization and zone-melting recrystallization). Silicon-on-insulator material can also be produced from a bulk silicon wafer by isolating a thin silicon layer from the substrate through the formation and oxidation of porous silicon (FIPOS) or through the ion beam synthesis of a buried insulator layer (SIMOX, SIMNI and SIMON). Finally, SOI material can be obtained by thinning a silicon wafer bonded to an insulator and a mechanical substrate (wafer bonding). Every approach has its advantages and its pitfalls, and the type of application to which the SOI material is destined dictates the material to be used in each particular case. SIMOX, for instance, seems to be an ideal candidate for VLSI and rad-hard applications, wafer bonding is more adapted to bipolar and power applications, while laser recrystallization is the main contender for the fabrication of 3D integrated circuits. This Chapter will review the different techniques used for producing SOI material.

Keywords

Porous Silicon Subgrain Boundary Silicon Film Wafer Bonding Porous Silicon Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Bibliography

  1. 2.1.
    I. Golecki, in “Comparison of thin-film transistor and SOI technologies”, Ed. by H.W. Lam and M.J. Thompson, Mat. Res. Soc. Symp. Proc., Vol. 33, p. 3, 1984Google Scholar
  2. 2.2.
    T. Sato, J. Iwamura, H. Tango, and K. Doi, in “Comparison of thin-film transistor and SOI technologies”, Ed. by H.W. Lam and M.J. Thompson, Mat. Res. Soc. Symp. Proc., Vol. 33, p. 25, 1984Google Scholar
  3. 2.3.
    H.M. Manasevit and W.I. Simpson, J. Appt. Phys, Vol. 35, p. 1349, 1964CrossRefGoogle Scholar
  4. 2.4
    RCA part number MWS-5101Google Scholar
  5. 2.5.
    B.E. Forbes, Hewlett-Packard Journal, p. 2, 1977Google Scholar
  6. 2.6.
    R.J. Hollingsworth, A.C. Ipri, and C.S. Kim, IEEE J. Solid-State Circuits, Vol. SC-13, p. 664, 1978Google Scholar
  7. 2.7.
    A.G.F. Dingwall, R.G. Stewart, B.C. Leung, and R.E. Stricker, Proc. IEDM, p. 193, 1978Google Scholar
  8. 2.8.
    D. Adams, D. Uehara, D. Wheeler, and D. Williams, Proc. of the IEEE SOS/SOI Technology Workshop, p. 58, 1987Google Scholar
  9. 2.9.
    A.E. Schmitz, R.H. Walden, M. Montes, D. M. Courtney, and E. Stevens, Tech. Digest of Symposium on VLSI Technology, p. 67, 1988Google Scholar
  10. 2.10.
    D.J. Dumin, S. Dabral, M.H. Freytag, P.J. Robertson, G.P. Carver, and D.B. Novoty, IEEE Trans. on Electron. Dev., Vol. 36, p. 596, 1989CrossRefGoogle Scholar
  11. 2.11.
    A.C. Ipri, Applied Solid-State Sciences, Supplement 2, Silicon Integrated Circuits, Part A, Ed. by. D. Kahng, Academic Press, p. 253, 1981Google Scholar
  12. 2.12.
    M.S. Abrahams and C.J. Buiocchi, Appl. Phys. Lett., Vol. 20, p. 91, 1972CrossRefGoogle Scholar
  13. 2.13.
    H.M. Manasevit, I. Golecki, L.A. Moudi, J.J. Yang, and J.E. Mee, J. Electrochem. Soc., Vol. 130, p. 1752, 1983CrossRefGoogle Scholar
  14. 2.14
    G.D. Robertson, Jr., P.K. Vasudev, R.G. Wilson, and V.R. Deline, Appl. Surf. Sci., Vol. 14, p. 128, 1982/83Google Scholar
  15. 2.15.
    G. Yaron and L.D. Hess, Solid-State Electronics, Vol. 23, IEEE Trans. on Electron Devices, Vol. 27, p. 573, 1980Google Scholar
  16. 2.16.
    S.S. Lau, S. Matteson, J.W. Mayer, P. Revesz, J. Gyulai, J.Roth, T.W. Sigmond, and T. Cass, Appl. Phys. Lett, Vol. 34, p. 76, 1979Google Scholar
  17. 2.17.
    J. Amano and K. Carey, Appl. Phys. Lett., Vol. 39, July 1980Google Scholar
  18. 2.18.
    P.K. Vasudev and D.C. Mayer, in “Comparison of thin-film transistor and SOI technologies”, Ed. by H.W. Lam and M.J. Thompson, Mat. Res. Soc. Symp. Proc., Vol. 33, p. 35, 1984Google Scholar
  19. 2.19.
    M.E. Roulet, P. Schwob, I. Golecki, and M.A. Nicolet, Electronics Letters, Vol. 15, p. 527, 1979CrossRefGoogle Scholar
  20. 2.20.
    I. Golecki, H.M. Manasevit, L.A. Moudy, J.J. Yang, and J.E. Mee, Appl. Phys. Letters, Vol. 42, p. 501, 1983CrossRefGoogle Scholar
  21. 2.21.
    I. Golecki, R.L. Maddox, H.L. Glass, A.L. Lin, and H.M. Manasevit, presented at the 26th electronic Materials Conf., Santa Barbara, CA, June 1984Google Scholar
  22. 2.22.
    M. Ihara, Y.Arimoto, M. Jifiku, T. Kimura, S. Kodama, H. Y.mawaki, and T. Yamaoka, J. Electrochem. Soc., Vol. 129, p. 2569, 1982CrossRefGoogle Scholar
  23. 2.23.
    Y. Hokari, M. Mikami, K. Egami, H. Tsuya, and M. Kanamori, Techn. Digest of IEDM, p. 368, 1983Google Scholar
  24. 2.24.
    K. Ikeda, H. Yamawaki, T. Kimura, M. Ihara, and M. Ozeki, Ext. Abstr. 5th International Workshop on Future Electron Devices, Miyagi-Zao, Japan, p. 225, 1988Google Scholar
  25. 2.25.
    T. Asano and H. Ishiwara, Jpn. J. Appl. Phys., Vol. 21, suppl. 21–1, p. 187, 1982Google Scholar
  26. 2.26.
    T.R. Harrison, P.M. Mankiewich, and Dayem, Appl. Phys. Lett., Vol. 41, p. 1102, 1982Google Scholar
  27. 2.27.
    H. Onoda, M. Sasaki, T. Katoh, and N. Hirashita, IEEE Trans. Electron Dev., Vol. ED-34, p. 2280, 1987Google Scholar
  28. 2.28.
    S. Sugiura, T. Yoshida, and K. Shono, Jpn. J. Appl. Phys, Vol. 22, p. L426, 1983 2.29. T. Takenaka and K. Shono, Jpn. J. Appl. Phys, Vol. 13, p. 1211, 1974Google Scholar
  29. 2.30.
    M. Morita, S. Isogai, N. Shimizu, K. Tsubouchi, and N. Mikoshiba, Jpn. J. Appl. Phys, Vol. 20, p. L173, 1981CrossRefGoogle Scholar
  30. 2.31.
    D.M. Jackson, Jr. and R.W. Howard, Trans. Met. Soc. AIME, Vol. 223, p. 468, 1965Google Scholar
  31. 2.32.
    H.M. Manasevit, D.H. Forbes, and I.B. Cardoff, Trans Met. Soc. AIME, Vol. 236, p. 275, 1966Google Scholar
  32. 2.33.
    G. Shimaoka and S.C. Chang, J. Vac. Sci. Technol., Vol. 9, p. 235, 1972CrossRefGoogle Scholar
  33. 2.34.
    C.H. Fa and T.T. Jew, IEEE Trans. on Electron Devices, Vol. ED-13, p. 290, 1966 2.35. T.I.Kamins, Solid-State Electronics, Vol. 15, p. 789, 1972CrossRefGoogle Scholar
  34. 2.36.
    S.W. Depp, B.G. Huth, A. Juliana, and R.W. Koepcke, in “Grain Boundaries in Semiconductors”,Ed. by H.J. Leamy, G.E. Pike, and C.H. Seager, Mat. Res. Soc. Symp. Proceedings, Vol. 5, p. 297, 1982Google Scholar
  35. 2.37.
    T.I. Kamins and P.J. Marcoux, IEEE Electron Device Letters, Vol. EDL-1, p. 159, 1980Google Scholar
  36. 2.38.
    H. Shichiro, S.D.S. Malhi, P.K. Chatterjee, A.H. Shah, G.P. Pollack, W.H. Richardson, R.R. Shah, M.A. Douglas, and H.W. Lam, in “Comparison of thin-film transistor and SOI technologies”, Ed. by H.W. Lam and M.J. Thompson, Mat. Res. Soc. Symp. Proceedings, North-Holland, Vol. 33, p. 193, 1984Google Scholar
  37. 2.39.
    S.D.S. Malhi, in “Comparison of thin-film transistor and SOI technologies”, Ed. by H.W. Lam and M.J. Thompson, Mat. Res. Soc. Symp. Proceedings, North-Holland, Vol. 33, p. 147, 1984Google Scholar
  38. 2.40.
    G.K Celler, H.J. Leamy, L.E. Trimble, and T.T. Sheng, Appl. Phys Lett., Vol. 39, p. 425, 1981CrossRefGoogle Scholar
  39. 2.41.
    C. Hill, in”Laser and Electron-Beam Solid Interactions and Material Processing”, Ed. by J.F. Gibbons, L.D. Hess, and T.W. Sigmon, Mat. Res. Soc. Symp. Proceedings, Vol. 1, p. 361, 1981Google Scholar
  40. 2.42.
    N.M. Johnson, D.Kt Biegelsen, H.C. Tuan, M.D. Moyer, and E. Fennel, IEEE Electron Dev. Lett, Vol. EDL-3, p. 369, 1982Google Scholar
  41. 2.43.
    G.J. Willems, J.J. Poortmans, and H.E. Maes, J. Appl. Phys., Vol. 62, p. 3408, 1987CrossRefGoogle Scholar
  42. 2.44.
    T.1. Kamins, M.M. Mandurah, and K.C. Saraswat, J. Electrochem. Soc., Vol. 125, p. 927, 1978CrossRefGoogle Scholar
  43. 2.45.
    H.W. Lam, R.F. Pinizotto and A.F. Tasch, J. Electrochem. Soc., vol 128, p. 1981, 1981CrossRefGoogle Scholar
  44. 2.46.
    K.F. Lee, T.J. Stultz, and J.F. Gibbons, Semiconductors and Semimetals, Vol. 17, cw Processing of Silicon and other Semiconductors, Academic Press, p. 227, 1984Google Scholar
  45. 2.47.
    M. Ohkura, K. Kusukawa, I. Yoshida, M. Miyao, and T. Tokuyama, Ext. Abstr. of the 15th Conf. on Solid-State Devices and Materials, Japan Society of Appl. Physics, p. 43, 1983Google Scholar
  46. 2.48.
    H.P. Le and H.W. Lam, Ext. Abstr. of Electrochem. Soc. Spring Meeting, Vol. 82–1, p. 240, 1982Google Scholar
  47. 2.49
    D.J. Wouters and H.E. Maes, J. Appl. Phys, Vol. 66, p. 900, 1989CrossRefGoogle Scholar
  48. 2.50.
    J.P. Colinge, H.K. Hu, and S. Peng, Electronics Letters, Vol. 21, p. 1102, 1985CrossRefGoogle Scholar
  49. 2.51.
    P.Seegebrecht, Ext. Abstracts of 5th Internat. Workshop on Future Electron Devices, Miyagi-Zao, Japan, p. 19, 1988Google Scholar
  50. 2.52.
    J.M. Hodé, J.P. Joly, and P. Jeuch, Ext. Abstr. of Electrochem. Soc. Spring Meeting, Vol. 82–1, p. 232, 1982Google Scholar
  51. 2.53.
    S. Kawamura, J. Sakurai, M. Nakano, and M. Tagaki, Appl. Phys. Lett., Vol. 40, p. 232, 1982Google Scholar
  52. 2.54.
    N.A. Aizaki, Appl. Phys. Lett., Vol. 44, p. 686, 1984Google Scholar
  53. 2.55.
    J.P. Colinge, E. Demoulin, D. Bensahel, and G. Auvert, Appl. Phys. Lett., Vol. 41, p. 346, 1982CrossRefGoogle Scholar
  54. 2.56.
    J.P. Colinge, Ext. Abstracts of 2nd Internat. Workshop on Future Electron Devices, Shuzenji, Japan, p. 13, 1985Google Scholar
  55. 2.57.
    T. Morishita, T. Miyajima, J. Kudo, M. Koba, and K. Awane, Ext. Abstracts of 2nd Internat. Workshop on Future Electron Devices, Shuzenji, Japan, p. 35, 1985Google Scholar
  56. 2.58.
    E. Fujii, K. Senda, F. Emoto, and Y. Hiroshima, Appl. Phys. Lett., Vol. 63, p. 2633, 1988Google Scholar
  57. 2.59.
    K. Sugahara, S. Kusunoki, Y. Inoue, T. Nishimura, and Y. Akasaka, J. Appl. Phys., Vol. 62, p. 4178, 1987CrossRefGoogle Scholar
  58. 2.60.
    T. Nishimura, Y. Inoue, K. Sugahara, S. Kusunoki, T. Kumamoto, S. Nakagawa, M. Nakaya, Y. Horiba, and Y. Akasaka, Proceedings of International Electron Device Meeting, p. 111, 1987Google Scholar
  59. 2.61.
    T. Kunio, K. Omaya, Y. Hayashi, and M. Morimoto, Proceedings of International Electron Device Meeting, p. 837, 1989Google Scholar
  60. 2.62.
    Y. Akasaka, Ext. Abstracts of 8th Internat. Workshop on Future Electron Devices, Kochi, Japan, p. 9, 1990Google Scholar
  61. 2.63.
    D. Bensahel, Ext. Abstracts of 5th Internat. Workshop on Future Electron Devices, Miyagi-Zao, Japan, p. 9, 1988Google Scholar
  62. 2.64.
    D.K. Biegelsen, N.M. Johnson, D.J. Bartelink, and M.D. Moyer, Appl. Phys. Lett., Vol. 38, p. 150, 1981CrossRefGoogle Scholar
  63. 2.65.
    S. Akiyama, N. Noshii, K. Yamazaki, M. Yoneda, S. Ogawa, and Y. Terni, Ext. Abstracts of 2nd Internat. Workshop on Future Electron Devices, Shuzenji, Japan, p. 41, 1985Google Scholar
  64. 2.66.
    R. Mukai, N. Sasaki, T. Iwai, S. Kawamura, and M. Nakano, Proceedings of International Electron Device Meeting, p. 360, 1983Google Scholar
  65. 2.67.
    A.J. Auberton-Hervé, J.P. Joly, P. Jeuch, J. Gautier, and J.M. Hodé, Proceedings of International Electron Device Meeting, p. 808, 1984Google Scholar
  66. 2.68.
    S. A. Lyon, R. J. Namanich, N.M. Johnson, and D.K. Biegelsen, Appl. Phys. Lett., Vol. 40, p. 316, 1982CrossRefGoogle Scholar
  67. 2.69.
    Y. Itoh, A. Wada, K. Morimoto, and K. Yamazaki, Ext. Abstracts of 8th Internat. Workshop on Future Electron Devices, Kochi, Japan, p. 97, 1990Google Scholar
  68. 2.70.
    D.K. Biegelsen, Ext. Abstracts of 2nd Internat. Workshop on Future Electron Devices, Shuzenji, Japan, p. 31, 1985Google Scholar
  69. 2.71.
    K. Egami and M. Kimura, Ext. Abstracts of 2nd Internat. Workshop on Future Electron Devices, Shuzenji, Japan, p. 105, 1985Google Scholar
  70. 2.72.
    R.C. McMahon, Microelectronic Engineering, Vol. 8, p. 255, 1988CrossRefGoogle Scholar
  71. 2.73.
    T. Hamasaki, T. Inoue, I. Higashinakagawa, T. Yoshii, and H. Tango, J. Appl. Phys., Vol. 59, p. 2971, 1986CrossRefGoogle Scholar
  72. 2.74.
    K. Shibata, T. Inoue, T. Takigawa, and S. Yoshii, Appl. Phys. Lett., Vol. 39, p. 645, 1981CrossRefGoogle Scholar
  73. 2.75.
    J.A. Knapp and S.T. Picraux, J. Crystal Growth, Vol. 63, p. 445, 1983CrossRefGoogle Scholar
  74. 2.76.
    T. Yoshii, T. Hamasaki, K. Suguro, T. Inoue, M. Yoshimi, K. Taniguchi, M. Kashiwagi, and H. Tango, Ext. Abstracts of 2nd Internat. Workshop on Future Electron Devices, Shuzenji, Japan, p. 51, 1985Google Scholar
  75. 2.77.
    M. Yoshimi, H. Hazama, M. Takahashi, S. Kambayashi, M. Kemmochi, and H. Tango, Ext. Abstracts of 5th Internat. Workshop on Future Electron Devices, Miyagi-Zao, Japan, p. 143, 1988Google Scholar
  76. 2.78.
    J.R. Davis, R.A. McMahon, and H. Ahmed, Electronics Letters, Vol. Vol. 18, p. 163, 1982Google Scholar
  77. 2.79.
    J.C.C. Fan, M.W. Geis, and B.Y. Tsaur, Appl. Phys. Lett., Vol. 38, p. 365, 1981CrossRefGoogle Scholar
  78. 2.80.
    M.W. Geis, H.I. Smith, B.Y. Tsaur, J.C.C. Fan, D.J. Silversmith, R.W. Mountain, and R.L. Chapman, in “Laser-Solid Interactions and Transient Thermal Processing of Materials”, Narayan, Brown and Lemons Eds., (North-Holland), MRS Symposium Proceedings, Vol. 13, p. 477, 1983Google Scholar
  79. 2.81.
    A. Kamgar and E. Labate, Mat. Letters, Vol. 1, p. 91, 1982CrossRefGoogle Scholar
  80. 2.82.
    T.J Stultz, Appl. Phys. Lett., Vol. 41, p. 824, 1982, and T.J. Stultz, J.C. Sturm, and J.F. Gibbons, in “Laser-Solid Interactions and Transient Thermal Processing of Materials”, Narayan, Brown and Lemons Eds., (North-Holland), MRS Symposium Proceedings, Vol. 13, p. 463, 1983Google Scholar
  81. 2.83.
    D.P. Vu, M. Haond, D. Bensahel, and M. Dupuy, J. Appl. Phys., Vol. 54, p. 437, 1983CrossRefGoogle Scholar
  82. 2.84.
    P.W. Mertens, D.J. Wouters, H.E. Maes, A. De Veirman, and J. Van Landuyt, J. Appl. Phys., Vol. 63, p. 2660, 1988CrossRefGoogle Scholar
  83. 2.85.
    D. Dutartre, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 157, 1988, and D. Dutartre, M. Haond, and D. Bensahel, in “Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53, p. 89, 1986Google Scholar
  84. 2.86.
    D. Dutartre, Appl. Phys. Lett., Vol. 48, p. 350, 1986Google Scholar
  85. 2.87.
    H.A. Atwater, Jr., VLSI Memo 83–149, Dept. of Electr. Eng. and Computer Science, MIT, Cambridge, MA, p. 23, 1983Google Scholar
  86. 2.88.
    H.J. Leamy, C.C. Chang, H. Baumgard, R.A. Lemons, and J. Cheng, Mat. Lett., Vol. 1, p. 33, 1982CrossRefGoogle Scholar
  87. 2.89.
    R.A. Lemons, M.A. Bosch, and D. Herbst, in “Laser-Solid Interactions and Transient Thermal Processing of Materials”, Narayan, Brown and Lemons Eds., (North-Holland), MRS Symposium Proceedings, Vol. 13, p. 581, 1983Google Scholar
  88. 2.90.
    M.W. Geis, H.I. Smith, B.Y. Tsaur, J.C.C. Fan, D.J. Silversmith, and R.W. Mountain, J. Electrochem. Soc., Vol. 129, p. 2812, 1982CrossRefGoogle Scholar
  89. 2.91.
    H.F. Wolf, “Semiconductor Data”, Pergamon Press, Oxford, 1969Google Scholar
  90. 2.92.
    J.C.C. Fan, B.Y Tsaur,C.K. Chen, J.R. Dick, and L.L. Kazmerski, in “Energy Beam-Solid Interactions and Transient Thermal Processing”, Fan and Johnson Eds., (North-Holland), MRS Symposium Proceedings, Vol. 23, p. 477, 1984Google Scholar
  91. 2.93.
    M.W. Geis, H.I. Smith, D.J. Silversmith, R.W. Mountain, and C.V. Thomson, J. Electrochem. Soc., Vol. 130, p. 1178, 1983Google Scholar
  92. 2.94.
    L. Pfeiffer, S. Paine, G.H. Gilmer, W. Saarloos, and K.W. West, Phys. Rev. Lett., Vol. 54, p. 1944, 1985CrossRefGoogle Scholar
  93. 2.95.
    L. Pfeiffer, K.W. West, D.C. Joy, J.M. Gibson, and A.E. Gelman, in “Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53, p. 29, 1986Google Scholar
  94. 2.96.
    J.S. Im, C.K. Chen, C.V. Thompson, M.W. Geis, and H. Tomita, in “Silicon-OnInsulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 169, 1988Google Scholar
  95. 2.97.
    P.M. Zavaracky, D.P. Vu, L. Allen, W. Henderson, H. Guckel, J.J. Sniegowski, T.P. Ford, and J.C.C. Fan, in “Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer and Hemment Eds., (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 213, 1988Google Scholar
  96. 2.98.
    M.W. Geis, C.K. Chen, H.T. Smith, P.M. Nitishin, B.Y. Tsaur, and R.W. Mountain, in “Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53, p. 39, 1986Google Scholar
  97. 2.99.
    E.W. Maby, M.W. Geis, Y.L. LeCoz, D.J. Silversmith, R.W. Mountain, and D.A. Antoniadis, Electron Dev. Lett., Vol. 2, p. 241, 1981CrossRefGoogle Scholar
  98. 2.100.
    C.K. Chen, L. Pfeiffer, K.W. West, M.W. Geis, S. Darack, G. Achaibar, R.W. Mountain, and B.Y. Tsaur, in “Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53, p. 53, 1986Google Scholar
  99. 2.101.
    M. Haond, D. Dutartre, R. Pantel, A. Straboni, and B. Vuillermoz, in “Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53, p. 59, 1986Google Scholar
  100. 2.102.
    E. Yablonovitch and T. Gmitter, J. Electrochem. Soc., Vol. 131, p. 2625, 1984CrossRefGoogle Scholar
  101. 2.103.
    P.W. Mertens and H.E. Maes, in “Beam-Solid Interactions: Physical Phenomena”, Knapp, Bprgesen and Zuhr Eds., (North-Holland), Mat. Res. Soc. Symposium Proceedings, Vol. 157, p. 461, 1990Google Scholar
  102. 2.104.
    P.W. Mertens, J. Leclair, H.E. Maes and W. Vandervorst, J. Appl. Phys., Vol. 67, p. 7337, 1990CrossRefGoogle Scholar
  103. 2.105.
    J. Knapp, L.P. Allen, and P.M. Zavaracky, Proc. of the IEEE SOS/SOI Technology Conference, p. 80, 1989Google Scholar
  104. 2.106.
    C. Karulkar, R.J. Hillard, and P. Rai-Choudhury, Proc. of the IEEE SOS/SOI Technology Conference, p. 97, 1989Google Scholar
  105. 2.107.
    G.K. Celler and L.E. Trimble, in “Energy Beam-Solid Interactions and Transient Thermal Processing”, Fan and Johnson Eds., (North-Holland), MRS Symposium Proceedings, Vol. 23, p. 567, 1984Google Scholar
  106. 2.108.
    L. Jastrzebski, J.F. Corboy, J.T. McGinn, and R. Pagliaro, Jr., J. Electrochem Soc., Vol. 130, p. 1571, 1983CrossRefGoogle Scholar
  107. 2.109.
    L. Jastrzebski and A.G. Kokkas, in “Energy Beam-Solid Interactions and Transient Thermal Processing”, Fan and Johnson Eds., (North-Holland), MRS Symposium Proceedings, Vol. 23, p. 417, 1984Google Scholar
  108. 2.110.
    L. Jastrzebski, J. Crystal Growth, Vol. 63, p. 493, 1983CrossRefGoogle Scholar
  109. 2.111.
    R.P. Zingg, G.W. Neudeck, B. Höfflinger, and S.T. Liu, J. Electrochem. Soc., Vol. 133, p. 1274, 1986CrossRefGoogle Scholar
  110. 2.112.
    S.T. Liu, P. Fechner, J. Friedrick, G. Neudeck, L. Velo, L. Bousse, and J. Plummer, Proc. IEEE SOS/SOI Technology Workshop, p. 16, 1988Google Scholar
  111. 2.113.
    D. R. Bradbury, T.I. Kamins, and C.W. Tsao, J. Appl. Phys., Vol. 55, p. 519, 1984 2.114. T.I. Kamins and D. R. Bradbury, IEEE Electron Device Lett., Vol. 5, p. 449, 1984CrossRefGoogle Scholar
  112. 2.115.
    R.P. Zingg, B. Höfflinger, and G.W. Neudeck, IEDM Technical Digest, p. 909, 1989Google Scholar
  113. 2.116.
    R.P. Zingg, H.G. Graf, W. Appel, P. Vöhringer, and B. Höfflinger, Proc. IEEE SOS/SOI Technology Workshop, p. 52, 1988Google Scholar
  114. 2.117.
    A. Ogura and Y. Fujimoto, Ext. Abstracts of 8th Internat. Workshop on Future Electron Devices, Kochi, Japan, p. 73, 1990, and A. Ogura and Y. Fujimoto, Appl. Phys. Lett., Vol. 55, p. 2205, 1989Google Scholar
  115. 2.118.
    P.J. Schubert and G.W. Neudeck, IEEE Electron Device Letters, Vol. 11, p. 181, 1990CrossRefGoogle Scholar
  116. 2.119.
    Y.Kunii, M. Tabe, and K. Kajiyama, J. Appl. Phys., Vol. 54, p. 2847, 1983, and Y.Kunii, M. Tabe, and K. Kajiyama, J. Appl. Phys., Vol. 56, p. 279, 1984CrossRefGoogle Scholar
  117. 2.120.
    H. Ishiwara, H. Yamamoto, S. Furukawa, M. Tamura, and T. Tokuyama, Appl. Phys. Lett., Vol. 43, p. 1028, 1983CrossRefGoogle Scholar
  118. 2.121.
    J.A Roth, G.L. Olson, and L.D. Hess, in “Energy Beam-Solid Interactions and Transient Thermal Processing”, Fan and Johnson Eds., (North-Holland), MRS Symposium Proceedings, Vol. 23, p. 431, 1984Google Scholar
  119. 2.122.
    H. Ishiwara, H. Yamamoto, and S. Furukawa, Ext. Abstracts of 2nd Internat. Workshop on Future Electron Devices, Shuzenji, Japan, p. 63, 1985Google Scholar
  120. 2.123.
    Y. Kunii and M. Tabe, Ext. Abstracts of 2nd Internat. Workshop on Future Electron Devices, Shuzenji, Japan, p. 69, 1985Google Scholar
  121. 2.124.
    T. Dan, H. Ishiwara, and S. Furukawa, Ext. Abstracts of 5th Internat. Workshop on Future Electron Devices, Miyagi-Zao, Japan, p. 189, 1988Google Scholar
  122. 2.125.
    M. Miyao, M. Moniwa, K. Kusukawa, and S. Furukawa, J. Appl. Phys., Vol. 64, p. 3018, 1988CrossRefGoogle Scholar
  123. 2.126.
    K. Imai, Solid-State Electron., Vol. 24, p. 59, 1981CrossRefGoogle Scholar
  124. 2.127.
    S.S. Tsao, IEEE Circuits and Devices Magazine, Vol. 3, p. 3, 1987CrossRefGoogle Scholar
  125. 2.128.
    K. Ansai, F. Otoi, M. Ohnishi, and H. Kitabayashi, Proc. IEDM, p. 796, 1984Google Scholar
  126. 2.129.
    S. Muramoto, H. Unno, and K. Ehara, Proc. Electrochem. Soc. Meeting, Boston, Vol. 86, p. 124, May 1986Google Scholar
  127. 2.130.
    L. Nesbit, Tech. Digest of IEDM, p. 800, 1984Google Scholar
  128. 2.131.
    R.P. Holmstrom and J.Y. Chi, Appl. Phys. Lett., Vol. 42, p. 386, 1983CrossRefGoogle Scholar
  129. 2.132.
    K. Barla, G. Bomchil, R. Herino, and. A. Monroy, IEEE Circuits and Devices Magazine, Vol. 3, p. 11, 1987CrossRefGoogle Scholar
  130. 2.133.
    E.J. Zorinsky, D. B. Spratt, and R. L. Vinkus, Tech. Digest IEDM, p. 431, 1986Google Scholar
  131. 2.134.
    K. Barla, G. Bomchil, R. Herino, J.C. Pfister, and J. Baruchel, J. Cryst. Growth, Vol. 68, p. 721, 1984, and K. Barla, R. Herino, and G. Bomchil, J. Appl. Phys, Vol. 59, p. 439, 1986CrossRefGoogle Scholar
  132. 2.136.
    M.I.J. Beale, N.G. Chew, A.G. Cullis, D.B. Garson, R.W. Hardeman, D.J. Robbins, and I.M. Young, J. Vac. Sci. Technol. B, p. 732, 1985Google Scholar
  133. 2.137.
    H. Takai and T. Itoh, J. Electronic Materials, Vol. 12, p. 293, 1983CrossRefGoogle Scholar
  134. 2.138.
    T.Mano, T. Baba, H. Sawada, and K. Imai, Tech. Digest Symposium on VLSI Technology, p. 12, 1982Google Scholar
  135. 2.139.
    K. Ehara, H. Unno, and S. Muramoto, Electrochem. Soc. Extended Abstracts, Vol. 85–2, p. 457, 1985Google Scholar
  136. 2.140.
    N.J. Thomas, J.R. Davis, K.J. Reeson, P.L.F. Hemment, J. Keen, J. Castledine, D. Brumhead, M. Goulding, J. Alderman, J.P.G. Farr, and L.G. Earwaker, Proc. IEEE SOS/SOI Technology Workshop, p. 39, 1988Google Scholar
  137. 2.140.
    M.Watanabe and A. Tooi, Japan. J. Appl. Phys., Vol. 5, p. 737, 1966Google Scholar
  138. 2.141.
    K. Izumi, M. Doken, and H. Ariyoshi, Electronics Letters, Vol. 14, p. 593, 1978CrossRefGoogle Scholar
  139. 2.142.
    K. Izumi, Y. Omura, M. Ishikawa, and E. Sano, Techn. Digest of the Symposium on VLSI Technology, p. 10, 1982Google Scholar
  140. 2.143.
    J. Stoemenos, C. Jaussaud, M. Bruel, and J. Margail, J. Crystal Growth, Vol. 73, p. 546, 1985CrossRefGoogle Scholar
  141. 2.144.
    G.K. Celler, P.L.F. Hemment, K.W. West, and J.M. Gibson, Appl. Phys. Lett., Vol. 48, p. 532, 1986CrossRefGoogle Scholar
  142. 2.145.
    J.R. Davis, A. Robinson, K. Reeson, and P.L.F. Hemment, Proc. IEEE SOS/SOI Technology Workshop, p. 71, 1987Google Scholar
  143. 2.146.
    J.P. Colinge and T.I. Kamins, Proc IEEE SOS/SOI Technology Workshop, p. 69, 1987Google Scholar
  144. 2.147.
    D. Hill, P. Fraundorf, and G. Fraundorf, Proc. IEEE SOS/SOI Technology Workshop, p. 29, 1987, and D. Hill, P. Fraundorf, and G. Fraundorf, J. Appl. Phys., Vol. 63, p. 4933, 1988CrossRefGoogle Scholar
  145. 2.148.
    J.P. Colinge, J. Kang, W. McFarland, C. Stout, and R. Walker, Proc. IEEE SOS/SOI Technology Workshop, p. 68, 1988Google Scholar
  146. 2.149.
    W.A. Krull and J.C. Lee, Proc. IEEE SOS/SOI Technology Workshop, p. 69, 1988Google Scholar
  147. 2.150.
    F. Namavar, E. Cortesi, B. Buchanan, and P. Sioshansi, Proc. IEEE SOS/SOI Technology Workshop, p. 117, 1989Google Scholar
  148. 2.151.
    T. W. Houston, H. Lu, P. Mei, T.G.W. Blake, L.R. Hite, R. Sundaresan, M. Matloubian, W.E. Bailey, J. Liu, A. Peterson, and G. Pollack, Proc. IEEE SOS/SOI Technology Workshop, p. 137, 1989Google Scholar
  149. 2.152.
    W.F. Kraus and J.C. Lee, Proc. IEEE SOS/SOI Technology Workshop, p. 173, 1989Google Scholar
  150. 2.153.
    A.J. Auberton-Hervé, B. Giffard, and M. Bruel, Proc. IEEE SOS/SOI Technology Workshop, p. 169, 1989Google Scholar
  151. 2.154.
    G.K. Celler, A. Kamgar, H.I. Cong, R.L. Field, S.J. Hillenius, W.S. Lindenberger, L.E. Trimble, and J.C. Sturm, Proc. IEEE SOS/SOI Technology Workshop, p. 139, 1989Google Scholar
  152. 2.155.
    H. Miki, Y. Omura, T. Ohmameuda, M. Kumon, K. Asada, K. Izumi, T. Asai, and T. Sugano, Techn. Digest of IEEE Internat. Electron Device Meeting (IEDM), p. 906, 1989Google Scholar
  153. 2.156.
    M.H. Badawi and K.V. Anand, J. Phys. D, Vol. 10, p. 1931, 1977CrossRefGoogle Scholar
  154. 2.157.
    E.A. Mayell-Ondruz and I.H. Wilson, Thin Solid Films, Vol. 114, p. 357, 1984CrossRefGoogle Scholar
  155. 2.158.
    P.L.F. Hemment, in “Semiconductor-On-Insulator and Thin Film Transistor Technology”, Chiang, Geis and Pfeiffer Eds., (North-Holland), MRS Symposium Proceedings, Vol. 53, p. 207, 1986Google Scholar
  156. 2.159.
    P.L.F. Hemment, K.J. Reeson, J.A. Kilner, R.J. Chater, C. Maesh, G.R. Booker, J.R. Davis, and G.K. Celler, Nucl. Instr. Meth. Phys. Res., Vol. B21, p. 129, 1987CrossRefGoogle Scholar
  157. 2.160.
    C. Jaussaud, J. Margail, J. Stoemenos, and M. Bruel, in “ Silicon-On-Insulator and Buried Metals in Semiconductors”, Sturm, Chen, Pfeiffer, and Hemment Eds, (North-Holland), MRS Symposium Proceedings, Vol. 107, p. 17, 1988Google Scholar
  158. 2.161.
    L. Jastrzebski, J.F. Corboy, C.W. Magee, J.H. Thomas, A.C. Ipri, D.A. Peters, G.W. Cullen, and H. Friedman, J. Electrochem. Soc., Vol. 135, p. 1746, 1988CrossRefGoogle Scholar
  159. 2.162.
    M.A. Guerra, Proc. of the 4th International Symposium on Silicon-onInsulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 21, 1990Google Scholar
  160. 2.163.
    G.K. Celler, presented at the 6th International Symposium on Silicon Materials Science and Technology, Semiconductor Silicon, Ed. by H. Huff, K. Barraclough and J.-I. Chikawa, the Electrochemical Society, Vol. 90–7, p. 472, 1990Google Scholar
  161. 2.164.
    R.S. Hockett and R.G. Wilson, Proc. of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 154, 1990Google Scholar
  162. 2.165.
    L. Nesbit, S. Stiffler, G. Slusser, and H. Vinton, J. Electrochem. Soc., Vol. 132, p. 2713, 1985.CrossRefGoogle Scholar
  163. 2.166.
    E. Sobeslaysky and W. Skorupa, Phys. Stat. Sol. (A), Vol. 144, p. 135, 1989CrossRefGoogle Scholar
  164. 2.167.
    W. Skorupa, K. Wollschläger, R. Grötzschel, J. Schöneich, E Hentschel, R. Kotte, F. Stary, H. Bartsch, and G. Götz, Nucl. Instr. and Meth. in Phys. Research, Vol. B32, p. 440, 1988Google Scholar
  165. 2.168.
    G. Zimmer and H. Vogt, IEEE Trans. on Electron Devices, Vol. 30, p. 1515, 1983CrossRefGoogle Scholar
  166. 2.169.
    L. Nesbit, G. Slusser, R. Frenette, and R. Halbach, J. Electrochem. Soc., Vol. 133, p. 1186, 1986CrossRefGoogle Scholar
  167. 2.170.
    W.P. Maszara, Proc. of the 4th International Symposium on Silicon-onInsulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 199, 1990Google Scholar
  168. 2.171.
    W.P. Maszara, G. Goetz, A. Caviglia, and J.B. McKitterick, J. Appl. Phys., Vol. 64, p. 4943, 1988CrossRefGoogle Scholar
  169. 2.172.
    T. Abe, M. Nakano, and T. Itoh, Proc. of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 61, 1990Google Scholar
  170. 2.173.
    A. Yamada, O. Okabayashi, T. Nakamura, E. Kanda, and M. Kawashima, Ext. Abstr. 5th International Workshop on Future Electron Devices, Miyagi-Zao, Japan, p. 201, 1988Google Scholar
  171. 2.174.
    N.F. Raley, Y. Sugiyama, and T. Van Duzer, J. Electrochem. Soc., Vol. 131, p. 161, 1984CrossRefGoogle Scholar
  172. 2.175.
    H. Gotou, A. Sekiyama, T. Seki, S. Nagai, N. Suzuki,M. Hayasaka, Y. Matsukawa, M. Miyazima, Y. Kobayashi, S. Enomoto, and K. Imaoka, Techn. Digest of IEEE Internat. Electron Device Meeting (IED M), p. 912, 1989Google Scholar
  173. 2.176.
    Proc. IEEE SOS/SOI Technology Workshop, page i, 1990Google Scholar
  174. 2.177.
    J.P. Colinge, Techn. Digest of International Electron Devices Meeting (IEDM), p. 817, 1989Google Scholar
  175. 2.178.
    B. Tillack, K. Hoeppner, H.H. Richter, and R. Banisch, Materials Science and Engineering (Elsevier Sequoia), Vol. B4, p. 237, 1989CrossRefGoogle Scholar
  176. 2.179.
    B. Tillack, R. Banisch, H.H. Richter, K. Hoeppner, O. Joachim, J. Knopke, and U. Retzlaf, Proceedings IEEE SOS/SOI Technology Conference, p. 121, 1990Google Scholar

Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.IMECBelgium

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