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Abstract

BiCMOS technology combines Bipolar and CMOS transistors in a single integrated circuit. By retaining the benefits of Bipolar and CMOS, BiCMOS is able to achieve VLSI circuits with speed-power-density performance previously unattainable with either technology individually. CMOS technology maintains an advantage over Bipolar in power dissipation, noise margins, packing density, and the ability to integrate large complex functions with high yields. Bipolar technology has advantages over CMOS in switching speed, current drive per unit area, noise performance, analog capability, and I/O speed. This last point is especially significant given the growing importance of ECL I/O, historically the exclusive domain of Bipolar technology, for high speed systems [1.1]. It follows that BiCMOS technology offers the advantages of: 1) improved speed over CMOS, 2) lower power dissipation than Bipolar (which simplifies packaging and board requirements), 3) flexible I/Os (TTL, CMOS, or ECL), 4) high performance analog, and 5) latchup immunity [1.2]. Compared to CMOS, the reduced dependence on capacitive load and process/temperature variations, and the multiple circuit configurations and I/Os possible with BiCMOS greatly enhance design flexibility and can lead to reduced design cycle time. The inherent robustness of BiCMOS with respect to temperature and process variations also reduces the variability of final electrical parameters resulting in a higher percentage of prime units, an important economic consideration.

Keywords

Power Dissipation CMOS Technology Gate Oxide Solid State Circuit Capacitive Load 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1990

Authors and Affiliations

  • A. R. Alvarez
    • 1
  1. 1.Aspen Semiconductor Corp.USA

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