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Moment Formation in TmSe1−xTex: From IV Semiconductors to IV Metals

  • Heinz Boppart
  • Peter Wachter
Part of the NATO ASI Series book series (NSSB, volume 117)

Abstract

The TmSe-TmTe system is unique among the rare earth monochalcogenides as it shows a compositionally induced semiconductor to metal transition (SMT). TmTe on the one end of the system is an ionic semiconductor with an energy gap of about 0.3 eV and the Tm ions are in a divalent state. TmSe on the other end is an intermediate valent metal with a Tm valence of about 2.8. For x > 0.4 the compounds are semiconducting and for x < 0.2 metallic. Both phases are syparated by a miscibility gap in the composition range 0.2 < x < 0.4.

Keywords

Bulk Modulus Moment Formation Inverse Magnetic Susceptibility High Energy Experiment Ionic Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1984

Authors and Affiliations

  • Heinz Boppart
  • Peter Wachter
    • 1
  1. 1.Laboratorium für FestkörperphysikETH ZürichZürichSwitzerland

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