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Use of Photoemission and Related Techniques to Study Device Fabrication

  • W. E. Spicer
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 46)

Abstract

This paper will be different from many of the others in this book. Although we share the interest of all the authors in the performance and testing of semiconductor devices, our approach is somewhat different. Rather than concentrating on examining completed devices, our approach is to examine, on a fundamental and atomic basis, the formation of a device structure or even a subcomponent of a device structure. The work was motivated by the realization of two factors: (1) that so many steps in a semiconductor device fabrication had become highly empirical, and (2) new tools have appeared which could be developed to investigate the device components and their fabrication on a detailed (atomic) level which had not been previously available. Rather than writing in the abstract, we will concentrate in this chapter on two major device components-the semiconductor-oxide interface and the Schottky barrier.

Keywords

Fermi Level Synchrotron Radiation Schottky Barrier Relate Technique Valence Band Maximum 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1979

Authors and Affiliations

  • W. E. Spicer
    • 1
  1. 1.Stanford W. Ascherman Professor of EngineeringStanford UniversityStanfordUSA

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