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Semiconductor Material Evaluation by Means of Schottky Contacts

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Nondestructive Evaluation of Semiconductor Materials and Devices

Part of the book series: NATO Advanced Study Institutes Series ((NSSB,volume 46))

Abstract

The large variety of possible application of semiconductor devices — from high current, high voltage to microwave devices, from integrated optoelectronics — is to a large extent due to the fact that semiconductors can be doped to a desired type and magnitude of conductivity. This is done by incorporating impurities whose energy levels in the forbidden gap are close to valence or conduction band and which are therefore completely ionized at normal temperatures of device operation. These levels are called shallow levels. The first part of this paper will discuss the principal methods for the evaluation of the concentration and local distribution of these shallow levels by means of Schottky contacts.

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Author information

Authors and Affiliations

  1. Chair of Solid State Electronics, University of Duisburg, D 4100, Duisburg, Federal Republic of Germany

    Klaus Heime

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  1. Klaus Heime
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Editor information

Editors and Affiliations

  1. The University of Pennsylvania, Philadelphia, Pennsylvania, USA

    Jay N. Zemel

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© 1979 Springer Science+Business Media New York

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Heime, K. (1979). Semiconductor Material Evaluation by Means of Schottky Contacts. In: Zemel, J.N. (eds) Nondestructive Evaluation of Semiconductor Materials and Devices. NATO Advanced Study Institutes Series, vol 46. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1352-7_5

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  • DOI: https://doi.org/10.1007/978-1-4757-1352-7_5

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-1354-1

  • Online ISBN: 978-1-4757-1352-7

  • eBook Packages: Springer Book Archive

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