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Characterization of Surface States at the Si-SiO2 Interface

  • G. DeClerck
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 46)

Abstract

The present knowledge of thermally grown silicon dioxide layers is extremely broad. A lot of effort has been given in the past to understanding the Si-SiO2system, giving rise to the modern fabrication techniques for high quality LSI-circuits. Nevertheless, the exact physical nature of the Si-SiO2 interface is still unresolved and many device characteristics still depend on poorly known properties of the thin interfacial layer between the silicon bulk and the amorphous silicon dioxide film. Surface generated leakage currents, 1/f-noise in MOSTransistors, carrier trapping and information losses in surface channel charge coupled devices are ascribed to so called “surface states” or “interface states”.

Keywords

Surface State Gate Voltage Capture Cross Section Deep Level Transient Spectroscopy Interface Charge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1979

Authors and Affiliations

  • G. DeClerck
    • 1
  1. 1.Departement Elektrotechniek Afdeling E.S.A.T.Katholieke Universiteit LeuvenHeverleeBelgium

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