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SEM Methods for the Characterization of Semiconductor Materials and Devices

  • C. J. Varker
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 46)

Abstract

The SEM has been used extensively as an analytical tool for high resolution surface microscopy [1,2]. When it is applied in this conventional mode, using secondary electron emission, it offers great depth of focus with high surface resolution and generally requires a minimum of sample preparation [3]. In recent years, the SEM has undergone major improvements in instrument design to accommodate a wide variety of newly developed analytical methods and imaging techniques [4]. Analytical methods such as energy dispersive x-ray spectroscopy [5] (EDS) and Auger electron spectroscopy [6,7] (AES) and the utilization of transmitted electrons in thin samples using the scanning transmission electron microscope [8,9] (STEM) represent a few examples of these developments.

Keywords

Minority Carrier Space Charge Region Minority Carrier Lifetime Schottky Barrier Diode Electron Beam Induce Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1979

Authors and Affiliations

  • C. J. Varker
    • 1
  1. 1.Semiconductor Research and Development LabMotorola Inc.PhoenixUSA

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