Power of the Radiation Emitted During the Tunnel Breakdown of Silicon p-n Junctions
The results are reported of measurements of the absolute output power, external quantum efficiency, and device efficiency observed during the tunnel breakdown of silicon p—n junctions. The radiation power obeyed the law 6 • 10-7exp(4.6ΔV) W/cm2 for 4-5.5 V across the junction. The device efficiency was approximately 10-5% and its quantum efficiency was 10-6 photons/hole.
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