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Defects and Their Detectability in Melt-Grown Crystals

  • D. T. J. Hurle
  • B. Cockayne
Part of the Nato Advanced Study Institutes Series book series (NSSB, volume 63)

Abstract

In general the topography, and often the type, of defects to be found in a given crystal are characteristic of the method by which it has been grown. Indeed, one can infer much about the growth conditions from a study of defect structure. Broadly speaking, defects are introduced either during the liquid — solid phase change itself or during the subsequent change in temperature or pressure as the crystal is taken to ambient conditions.

Keywords

Cellular Structure Cell Boundary Growth Axis Axis Crystal Segregation Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1980

Authors and Affiliations

  • D. T. J. Hurle
  • B. Cockayne

There are no affiliations available

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