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Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systems

  • Jean-Pierre Faurie
Part of the NATO ASI Series book series (NSSB, volume 189)

Abstract

II-VI HgTe-based semiconductor microstructures have recently attracted much interest because of their unique fundamental properties and their great technological interest for novel infrared devices. An important parameter, which determines most of the heterostructure properties is the valence-band discontinuity ΔEv. The value of ΔEv is presently disputed in HgTe-CdTe heterojunctions. Although large discrepancies exist between optical or magneto-optical and x-ray photoemission experiments it turns out that ΔEv can be classified into two groups: small ΔEv (0–120 meV) and large ΔEv (300–400 meV). This paper presents an overview of these experimental data.

Keywords

Core Level Envelope Function CdTe Layer Growth Order Band Discontinuity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Jean-Pierre Faurie
    • 1
  1. 1.Department of PhysicsUniversity of Illinois at ChicagoChicagoUSA

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