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Excitons in Quantum Well Structures

  • K. K. Bajaj
  • G. D. Sanders
  • R. L. Greene
Part of the NATO ASI Series book series (NSSB, volume 189)

Abstract

In this paper we provide a brief overview of the properties of excitons in GaAs-A1GaAs quantum well structures. We first briefly review the various calculations of the binding energies of excitons in quantum wells as a function of well size and compare these results with the available experimental data. We then outline briefly the calculations of the binding energies, oscillator strengths and absorption spectra of excitons in quantum wells in the presence of an externally applied electric field and again compare these results with the experimental data. We also point out the applications of these results to a class of opto-electronic devices.

Keywords

Oscillator Strength Trial Wave Function Heavy Hole Subband Universal Energy System Epitaxial Crystal Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • K. K. Bajaj
    • 1
  • G. D. Sanders
    • 2
  • R. L. Greene
    • 3
  1. 1.Avionics Laboratory, Wright-Patterson AFBUS Air Force Wright Aeronautical LaboratoriesUSA
  2. 2.Universal Energy Systems, Inc.DaytonUSA
  3. 3.Department of PhysicsUniversity of New OrleansNew OrleansUSA

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