Photoreflectance and Photoluminescence of Strained InxGal−xAs/GaAs Single Quantum Wells

  • D. J. Arent
  • K. Deneffe
  • C. Van Hoof
  • J. De Boeck
  • R. Mertens
  • G. Borghs
Part of the NATO ASI Series book series (NSSB, volume 189)


Molecular Beam Epitaxy (MBE) grown single strained layer quantum wells composed of GaAs/InxGa1−x As/GaAs have been characterized at room temperature by photoreflectance and at 6K and 77K by photoluminescence. Excellent agreement between experimentally determined quantum transitions and theory is achieved utilizing a band offset ratio of 85:15 (conduction band:valence band) and a contribution of the hydrostatic compression to the valence band movement corresponding to the pressure sensitivity of the spin orbit band. Analysis of low temperature data indicate that strain induced band changes are not temperature dependent and data obtained at 77K leads to an empirical equation describing the non-strained band gap energy as a function of In fraction, and which differs slightly from that for bulk InGaAs crystals.


Hydrostatic Compression InGaAs Layer Valence Band State Strained Layer Superlattice Heavy Hole Band 
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  1. 1.
    J.W. Matthews and A.E. Blakeslee, J.Cryst.Growth 27, 118, 1974.ADSGoogle Scholar
  2. 2.
    See for example I Bar-Joseph, G. Sucha, D.A.B. Miller, D.S. Chemla, B.I.Miller, and U. Koren, Appl.Phys.Lett. 52, 51, 1988.Google Scholar
  3. 3.
    Y.J. Yang, K.Y. Hsieh and R.M. Kolbas, Appl.Phys.Lett. 51,215, 1987, and references therein.Google Scholar
  4. 4.
    J.-Y. Marzin, M. N. Charasse, and B. Sermage, Phys.Rev.B, 31, 8298, 1985.ADSCrossRefGoogle Scholar
  5. 5.
    S. P. Kowalczyk. W.J. Schaffer, E.A. Kraut, and R.W. Grant, J.Vac. Sci. Tech.B 20, 705, 1982.ADSCrossRefGoogle Scholar
  6. 6.
    J. Hwang, P. Pianetta, C.K. Shih, W.E. Spicer, Y.-C. Pao, and J.S. Harris, Jr., Appl. Phys. Lett. 51, 1632, 1987.ADSCrossRefGoogle Scholar
  7. 7.
    G. Ji, D. Huang, U.K. Reddy, H. Unlu, T.S. Henderson, and H. Morkoc, J.Vac.Sci.Tech.B 5, 1346, 1987.CrossRefGoogle Scholar
  8. 8.
    W. Potz and D.K Ferry, J.Vac.Sci.Tech.B 4, 1006, 1986.CrossRefGoogle Scholar
  9. 9.
    J. Menendez, A. Pinczuk, D.J. Werder, A.Y. Cho, and D.L.Sivco, J.Vac.Sci.Tech.B 5, 1256, 1986.CrossRefGoogle Scholar
  10. 10.
    I.J. Fritz, S.T. Picraux, L.R. Dawson, W.D. Laidig, and N.G. Anderson, Appl.Phys.Lett. 46, 967, 1985.ADSCrossRefGoogle Scholar
  11. 11.
    I.J. Fritz, P.L. Gourley, and L.R. Dawson, Appl.Phys.Lett. 51, 1004, 1987.ADSCrossRefGoogle Scholar
  12. 12.
    M. Gal, P.C. Taylor, B.F.Usher, and P. J. Orders J.Appl.Phys. 62, 3898, 1987.ADSCrossRefGoogle Scholar
  13. 13.
    P.M.J. Maree, J.C. Barbour, J.F. van der Veen, K.L. Kavanagh, C.W.T. Bulle-Lieuwma, and M.P.A. Viegers,.Appl.Phys. 62, 4413, 1987.Google Scholar
  14. 14.
    P.L. Gourley, I.J. Fritz, and L.R. Dawson, Appl.Phys.Lett. 52, 337, 1988.ADSGoogle Scholar
  15. 15.
    T.P. Pearsall, F.H. Pollak, J.C. Bean, and R. Hull, Phys.Rev.B 33,6821, 1986, and references therein.Google Scholar
  16. 16.
    J.Y. Marzin, in Heterojuntions and Semiconductor Superlattices, ed. G.Allan, G. Bastard, N. Boccara, M. Lannoo, and M. Voos, Springer, Berlin. 1986, p. 161.CrossRefGoogle Scholar
  17. 17.
    R.E. Nahorey, M.A. Pollack, W.D. Johnston, Jr, and R.L. Barns, Appl.Phys.Lett. 33, 659, 1978.ADSCrossRefGoogle Scholar
  18. 18.
    D.E. Aspnes, in Handbook on Semiconductors, ed. M. Balkanski, North Holland, New York, 1980, Vol.2, p.109, and references therein.Google Scholar
  19. 19.
    B.V. Shanabrook, O.J. Glembocki, and W.T. Beard, Phys.Rev.B. 35, 2540, 1987.ADSCrossRefGoogle Scholar
  20. 20.
    W.M. Theis, G.D. Sanders, C.E. Leak, K.K. Bajaj, and H. Morkoc, Phys.Rev.B. 37(6), 3042, 1988.ADSCrossRefGoogle Scholar
  21. 21.
    G. Ji,D. Huang, U.K. Reddy, T.S. Henderson, R. Houdre, andH. Morkoc, J.Appl.Phys. 62, 3366, 1987.ADSCrossRefGoogle Scholar
  22. 22.
    See for example calculations for AlGaAs/GaAs quantum well systems, R.L Greene, K.K. Bajaj, and D. E. Phelps Phys.Rev.B. 29(4), 1807, 1984;Google Scholar
  23. G.D.Sanders and Y.C. Chang, Phys.Rev.B. 32(8), 5517, 1985.ADSCrossRefGoogle Scholar
  24. 23.
    K.H. Goetz, D. Bimberg, H. Jur, J. Selders, A.V. Solomonov, G.F. Glinksii, M. Razeghi, and J.J. Robin, J.Appl.Phys. 54, 4543, 1983.ADSCrossRefGoogle Scholar
  25. 24.
    Y.T. Leu, F.A. Thiel, H. Scheiber, B.I. Miller, and J. Bachmann, J.Electron.Mater. 8, 663, 1979.ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • D. J. Arent
    • 1
  • K. Deneffe
    • 1
  • C. Van Hoof
    • 1
  • J. De Boeck
    • 1
  • R. Mertens
    • 1
  • G. Borghs
    • 1
  1. 1.Interuniversity Microelectronics CenterLeuvenBelgium

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