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Interface Recombination in GaAs-GaAlAs Quantum Wells

  • Bernard Sermage
Part of the NATO ASI Series book series (NSSB, volume 189)

Abstract

Interface recombination has been studied in MBE grown GaAs-Ga1−xAlxAs undoped double heterostructures with GaAs thicknesses varying between 15 Å and 1 µm. We study the influence of quantum confinement and of a superlattice in the under confinement layer on interface recombination. We also show that radiative recombination at room temperature in quantum wells is bimolecular.

Keywords

Radiative Recombination Excitation Power Radiative Lifetime GaAs Layer Streak Camera 
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References

  1. 1.
    P. Dawson, G. Duggan, H.I. Ralph and K. Woodbridge, Photoluminescence decay times in multiple quantum well heterostructures prepared by molecular beam epitaxy, in the Proceeding of the 17th ICPS, Eds. D.J. Chadi and W.A. Harrison, Springer, New York, 1985, p. 551Google Scholar
  2. 2.
    P. Dawson, G. Duggan, H.I. Ralph and K. Woodbridge, Photoluminescence decay times in AlGaAs-GaAs multiple quantum well heterostructures, Superlatticesand Microstructures , 1: 173 (1985)ADSGoogle Scholar
  3. 3.
    D. Bimberg, J. Christen, A. Werner, M. Kunst, G. Weiman and W. Schlapp, Evidence for excitonic decay of excess charge carriers in high quality GaAs quantum wells at room temperature, Appl. Phys. Lett. 49: 76 (1986)ADSCrossRefGoogle Scholar
  4. 4.
    J.E. Fouquet and A.E. Siegman, Recombination times in GaAs/A1xGa1-xAs multiple quantum well structures, in the Proceedings of the 17th ICPS, Eds. D.J. Chadi and W.A. Harrison, Springer, New York, 1985, p. 583Google Scholar
  5. 5.
    J.E. Fouquet and R.D. Burnhour, Recombination dynamics in GaAs/AlxGa1-xAs quantum well structures, IEEE Journal of Quantum Electronics QE-22: 1799 (1986)Google Scholar
  6. 6.
    E.H. Böttcher, K. Ketterer, D. Bimberg, G. Neiman and W. Schlopp, Excitonic and electron hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs-GaA1As multiple quantum well lasers at room temperature, Appl. Phys. Lett. 50: 1074 (1987)ADSCrossRefGoogle Scholar
  7. 7.
    K. Fujiwara, A. Nakamura, Y. Tokuda, T. Nakayama and M. Hirai, Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlatticesAppl. Phys. Lett. 49: 1193 (1986)ADSCrossRefGoogle Scholar
  8. 8.
    B. Sermage, M.F. Pereira, F. Alexandre, J. Beerens, R. Azoulay and N. Kobayashi, Interface recombination in GaAs-GaA1As double heterostructures and quantum wells, in Proceedings of the 1987 Int. Symp. GaAs and related compounds, Eds. A. Christou and H.S. Rupprecht, Institute of Physics, Bristol, 1988, p. 605Google Scholar
  9. 9.
    B. Sermage, M.F. Pereira, F. Alexandre, J. Beerens, R. Azoulay, C. Tallot, A.M. Jean Louis and D. Meichenin, Interface recombination in GaAs-GaA1As quantum wells, Journal de Physique, 48: C5–135 (1987)Google Scholar
  10. 10.
    G. Duggan, H.J. Ralph and R.J. Elliott, Interface recombination in p type GaAs-GaAlAs quantum well heterostructures, Solid State Comm., 56: 17 (1985)ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Bernard Sermage
    • 1
  1. 1.Laboratoire de BagneuxCentre National d’Etudes des TélécommunicationsBagneuxFrance

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