Interface Recombination in GaAs-GaAlAs Quantum Wells
Interface recombination has been studied in MBE grown GaAs-Ga1−xAlxAs undoped double heterostructures with GaAs thicknesses varying between 15 Å and 1 µm. We study the influence of quantum confinement and of a superlattice in the under confinement layer on interface recombination. We also show that radiative recombination at room temperature in quantum wells is bimolecular.
KeywordsRadiative Recombination Excitation Power Radiative Lifetime GaAs Layer Streak Camera
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- 1.P. Dawson, G. Duggan, H.I. Ralph and K. Woodbridge, Photoluminescence decay times in multiple quantum well heterostructures prepared by molecular beam epitaxy, in the Proceeding of the 17th ICPS, Eds. D.J. Chadi and W.A. Harrison, Springer, New York, 1985, p. 551Google Scholar
- 4.J.E. Fouquet and A.E. Siegman, Recombination times in GaAs/A1xGa1-xAs multiple quantum well structures, in the Proceedings of the 17th ICPS, Eds. D.J. Chadi and W.A. Harrison, Springer, New York, 1985, p. 583Google Scholar
- 5.J.E. Fouquet and R.D. Burnhour, Recombination dynamics in GaAs/AlxGa1-xAs quantum well structures, IEEE Journal of Quantum Electronics QE-22: 1799 (1986)Google Scholar
- 8.B. Sermage, M.F. Pereira, F. Alexandre, J. Beerens, R. Azoulay and N. Kobayashi, Interface recombination in GaAs-GaA1As double heterostructures and quantum wells, in Proceedings of the 1987 Int. Symp. GaAs and related compounds, Eds. A. Christou and H.S. Rupprecht, Institute of Physics, Bristol, 1988, p. 605Google Scholar
- 9.B. Sermage, M.F. Pereira, F. Alexandre, J. Beerens, R. Azoulay, C. Tallot, A.M. Jean Louis and D. Meichenin, Interface recombination in GaAs-GaA1As quantum wells, Journal de Physique, 48: C5–135 (1987)Google Scholar