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The Pressure Dependent Band Offset in a Type II Superlattice, a Test for Band Line-Up Theories

  • L. M. Claessen
Part of the NATO ASI Series book series (NSSB, volume 189)

Abstract

The heterojunction band offset, i.e. the position of the bandedges in one semiconductor relative to those in another one in close contact, presents a problem in solid state physics which is neither experimentally nor theoretically well understood. Yet this quantity is of growing and crucial interest for the characterisation and design of novel heterostructure devices, which can now be grown with near perfection by modern growth techniques such as MBE) and MOCVD)1–3

Keywords

Valence Band Pressure Dependence Landau Level Effective Electron Mass Band Offset 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • L. M. Claessen
    • 1
  1. 1.Hochfeld MagnetlaborMax-Planck-Institut für FestkörperforschungGrenobleFrance

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