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Observation of Ballistic Holes

  • M. Heiblum
  • K. Seo
  • H. P. Meier
  • T. W. Hickmott
Part of the NATO ASI Series book series (NSSB, volume 189)

Abstract

We report the first direct observation of ballistic hole transport in semiconductors, via energy spectroscopy experiments. Light holes are preselected and injected via tunnelling into 31 nm thick p+ GaAs layers. About 10% of the injected holes have been found to traverse ballistically maintaining distributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of the ballistic holes, are used to support the light nature of the ballistic holes.

Keywords

Heavy Hole GaAs Layer Light Hole Ballistic Transport Hole Band 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • M. Heiblum
    • 1
  • K. Seo
    • 1
  • H. P. Meier
    • 2
  • T. W. Hickmott
    • 1
  1. 1.IBM Research DivisionT. J. Watson Research CenterYorktown HeightsUSA
  2. 2.IBM Research DivisionZurich Research LaboratoryRüschlikonSwitzerland

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