Comments on “Can Band Offsets be Changed Controllably?”
Offsets of valence and conduction bands at interfaces are among the key design parameters which allow engineering of electronic properties of semiconductor heterostructures. In this paper are discussed some current theoretical ideas on the causes of the offsets and the extent to which the interface dipole can be changed by atomic scale control of the chemical composition at the interface. The primary conclusion is that significant variations appear possible by the dipoles due to oriented pairs of polar atoms at the interface. Conditions where this can occur are discussed.
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- 2.For a recent review of theory, see J. Tersoff, in Heterojunctions: A Modern View of Band Discontinuities and Applications,G. Margaritondo and F. Capasso, eds. (North Holland, Amsterdam, in press).Google Scholar
- 3.A recent review comparing various models and full calculations is given in R. M. Martin, “Asian Pacific Symposium on Surface Physics”, ed. by Xie Xide ( World Scientific, Singapore, 1987 ), p. 14.Google Scholar
- 4.C. G. Van de Walle, Ph.D. thesis, Stanford University, Palo Alto, California, 1986 (unpublished); most results are published in Refs. 5–6.Google Scholar
- 6.C. G. Van de Walle and R. M. Martin, J. Vac. Sci. Technol. B 4, 1055 (1986)Google Scholar
- C. G. Van de Walle and R. M. Martin, Phys. Rev. B 35, 8524 (1987).Google Scholar
- C. G. Van de Walle and R. M. Martin, Phys. Rev. B 37, 4108 (1987).Google Scholar
- 19.M. Jaros, Phys. Rev. B, to be published.Google Scholar
- A. Munoz, J. C. Duran, and F. Flores, Surf. Sci. 181, L200 (1988).Google Scholar
- 24.A. Munoz, private communication.Google Scholar
- 25.S. Satpathy and R. M. Martin, unpublished.Google Scholar
- 26.S. Satpathy and R. M. Martin, Bull. Am. Phys. Soc. 33, 374 (1988), and to be published in Phys. Rev.Google Scholar