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Principles of Conversion of Electrical Energy into Light

  • Yu. N. Nikolaev
  • M. V. Fok
Conference paper
Part of the The Lebedev Physics Institute Series book series (LPIS, volume 50)

Abstract

The physical basis for increasing the efficiency of thermal and electroluminescent light sources is considered. Calculations are given of the optimal parameters of a semiconductor to be used as an incandescent body and as an electroluminescent light source. These parameters include the forbidden band width, the optimal impurity concentration, and the depth of impurity levels. It is shown that the replacement of tungsten with a plate of a suitably selected semiconducting material should double or treble the light output of an incandescent lamp. It is also shown that the efficiency of injection-electroluminescence light sources may approach 100%.

Keywords

Luminescence Center Joule Heat Incandescent Lamp Tungsten Lamp Free Hole 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Consultants Bureau, New York 1972

Authors and Affiliations

  • Yu. N. Nikolaev
  • M. V. Fok

There are no affiliations available

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