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The Molecular Beam Epitaxial Growth of GaAs on Si

  • D. Woolf

Abstract

The aim of this project is not only to grow high quality GaAs onto an Si substrate, but also to gain an understanding of the growth process and the physics of the GaAs/Si interface.

Keywords

State Physics High Resolution Growth Process Molecular Beam Epitaxial Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • D. Woolf
    • 1
  1. 1.Department of PhysicsUniversity College CardiffCardiffWales, UK

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