Abstract
The aim of this project is not only to grow high quality GaAs onto an Si substrate, but also to gain an understanding of the growth process and the physics of the GaAs/Si interface.
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© 1988 Plenum Press, New York
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Woolf, D. (1988). The Molecular Beam Epitaxial Growth of GaAs on Si. In: Dhez, P., Weisbuch, C. (eds) Physics, Fabrication, and Applications of Multilayered Structures. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-0091-6_54
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DOI: https://doi.org/10.1007/978-1-4757-0091-6_54
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-0093-0
Online ISBN: 978-1-4757-0091-6
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