The Molecular Beam Epitaxial Growth of GaAs on Si

  • D. Woolf


The aim of this project is not only to grow high quality GaAs onto an Si substrate, but also to gain an understanding of the growth process and the physics of the GaAs/Si interface.



Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • D. Woolf
    • 1
  1. 1.Department of PhysicsUniversity College CardiffCardiffWales, UK

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