Enhanced Hole Mobility in Si Doping Superlattices
The construction of a superlattice in a homogeneous semiconductor by modulation impurity doping is a recent development. One of the likely advantages of such a structure is enhanced charge carrier mobilities in the layers.
KeywordsOhmic Contact Epitaxial Layer Schottky Barrier Eutectic Temperature Hall Measurement
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© Plenum Press, New York 1988