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Enhanced Hole Mobility in Si Doping Superlattices

  • D. W. Smith
  • R. Biswas
  • R. Houghton
  • E. H. C. Parker
  • T. E. Whall

Abstract

The construction of a superlattice in a homogeneous semiconductor by modulation impurity doping is a recent development. One of the likely advantages of such a structure is enhanced charge carrier mobilities in the layers.

Keywords

Ohmic Contact Epitaxial Layer Schottky Barrier Eutectic Temperature Hall Measurement 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    Y. Shiraki: Private communication (1987)Google Scholar
  2. 2.
    K. Nakagawa and Y. Shiraki: Surface Science 174 (1986)Google Scholar

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • D. W. Smith
    • 1
  • R. Biswas
    • 1
  • R. Houghton
    • 1
  • E. H. C. Parker
    • 1
  • T. E. Whall
    • 1
  1. 1.Advanced Semiconductor Research Group, Dept. of PhysicsUniversity of WarwickCoventryEngland

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