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Rheed Oscillations in MBE and Their Applications to Precisely Controlled Crystal Growth

  • Tsunenori Sakamoto

Abstract

It is generally recognized that molecular beam epitaxy (MBE) technology has a number of advantages over conventional growth methods. For example, the real-time in-situ analysis of surface structures during growth is very attractive. For this purpose, reflection high energy electron diffraction (RHEED) has been commonly used, since the geometry of this technique is ideally suited for MBE, and the diffraction patterns contain considerable information about the surface.

Keywords

Reflection High Energy Electron Diffraction Molecular Beam Epitaxy Growth Intensity Oscillation Growth Interruption Reflection High Energy Electron Diffraction Pattern 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • Tsunenori Sakamoto
    • 1
  1. 1.Electrotechnical LaboratoryIbaraki, 305Japan

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