Rheed Oscillations in MBE and Their Applications to Precisely Controlled Crystal Growth
It is generally recognized that molecular beam epitaxy (MBE) technology has a number of advantages over conventional growth methods. For example, the real-time in-situ analysis of surface structures during growth is very attractive. For this purpose, reflection high energy electron diffraction (RHEED) has been commonly used, since the geometry of this technique is ideally suited for MBE, and the diffraction patterns contain considerable information about the surface.
KeywordsReflection High Energy Electron Diffraction Molecular Beam Epitaxy Growth Intensity Oscillation Growth Interruption Reflection High Energy Electron Diffraction Pattern
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