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Lattice Deformation and Misorientation of GaAs Layers Grown on (100) Si by Molecular Beam Epitaxy

  • F. E. G. Guimaraes
  • K. Ploog

Abstract

GaAs epitaxial layers of thicknesses ranging from 0.5 to 4 urn were grown by molecular beam epitaxy (MBE) on (100) oriented Si substrates (2° off along the <011> direction) using the two-step growth method. The structural properties of the grown layers have been determined by measuring the symmetric (400) and the asymmetric (511) and (5̄11) reflections with a -high-resolution double-crystal x-ray diffractometer.

Keywords

Molecular Beam Epitaxy Epitaxial Layer Misfit Dislocation Lattice Deformation GaAs Layer 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • F. E. G. Guimaraes
    • 1
  • K. Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Germany

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