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Electronic Structure of Strained Sin/Gen(001) Superlattices

  • S. Ellialtioglu
  • O. Gülseren
  • S. Ciraci

Abstract

Using the empirical tight binding method we have investigated the electronic properties of the Sin/Gen(001) strained superlattices as a function of the superlattice periodicity and the band misfit. For n ≥ 3, we have found some conduction band states localized in Si, and some in Ge, presenting a band discontinuity quite different from the staggered type-II. The hole states localized in Ge appear for n ≥ 4. The difference between the direct and indirect band gaps is reduced from 0.39 eV for n = 3 to 0.035 eV for n = 6 which can be considered to be quasi-direct.

Keywords

Middle East Quantum Size Effect Hole State Valence Band Maximum Band Discontinuity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    C.G. Van de Walle and R.M. Martin: Phys. Rev. B34, 5621 (1986)ADSGoogle Scholar
  2. 2.
    S. Ciraci and I.P. Batra: Phys. Rev. (in print)Google Scholar
  3. 3.
    T.P. Pearsall et al.: Phys. Rev. Lett. 58, 729 (1987)ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • S. Ellialtioglu
    • 1
  • O. Gülseren
    • 2
  • S. Ciraci
    • 2
  1. 1.Physics DepartmentMiddle East Technical UniversityAnkaraTurkey
  2. 2.Department of PhysicsBilkent UniversityMaltepe, AnkaraTurkey

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