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How to Observe Interfaces

  • P. Houdy
  • J. A. Sirat

Abstract

A diode RF sputtering system is used to realize ultra thin layer stacks (2d ≃ 40 Å) of W and C or W and Si, for soft X-ray optics. Regulation of growth parameters allows to control thickness reproducibility with a good accuracy (0.04%). Low pressure (≃1 mTorr) minimizes interface roughness. However, intrinsic interface roughness limits multilayer performances as shown by X-ray reflexion computer simulations. In order to understand the interface formation process and structure we have used three methods.

Keywords

Good Accuracy Substrate Surface Growth Parameter Surface Defect Silicon Surface 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • P. Houdy
    • 1
  • J. A. Sirat
    • 1
  1. 1.Laboratoires d’Electronique et de Physique AppliquéeLimeil-Brévannes CédexFrance

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