Electronic Devices Using Multilayer Structures
The field of resonant tunneling in quantum-well structures is in the state of renaissance. The basic physical phenomena anticipated in such structures were qualitatively understood in the earlier period (1970’s), but their experimental realization had to wait until the maturity of modern epitaxial techniques. Since the early reports, substantial progress has been achieved in the material quality of heterojunction-barrier structures grown by MBE and OMCVD techniques. The interest in such structures has risen further after the remarkable recent experiments of Sollner and coworkers who studied the microwave activity in double-barrier (DB) quantum-well (QW) diodes. These workers have demonstrated a negative differential resistance (NDR) in these diodes directly in the current-voltage characteristics at 77 K (rather than in the derivative of the current as was the case with the first reports) and obtained active oscillations from a DBQW diode mounted in a resonant cavity (Sollner et al., 1984). The material quality of DBQW diode structures has steadily improved to the point that a pronounced NDR can now be observed at room temperature. A review of resonant-tunneling and other perpendicular quantum transport phenomena in double barriers and superlattices, as well as some of their device applications, was recently given by Capasso et al. (1986) and Luryi (1987). Active research going on in many laboratories can be expected to culminate in the implementation of new and exciting devices to be used in the future high-speed electronics.
KeywordsConducting Layer Alloy Layer Resonant Tunneling Negative Differential Resistance IEEE Electron Device
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- Esipov, S. E. and Levinson, I. B. (1986) Zh. Eksp. Teor. Fiz. 90, 330 [Sov. Phys. — JETP 63, 191].Google Scholar
- Kazarinov, R. F. and Suris, R. A. (1971) Soviet. Phys. — Semicond. 5, 707.Google Scholar
- Luryi, S. (1985b) IEDM-85 Tech. Digest, 666.Google Scholar
- Luryi, S. (1985c) IEEE Electron Device Lett. EDL-6, 347.Google Scholar
- Luryi, S. (1985d) Physica 134 B, 466.Google Scholar
- Luryi, S. (1987a) in Heterojunctions: a Modern View of Band Discontinuities and Device Applications, ed. by F. Capasso and G. Margaritondo (Elsevier Science) Chap. 12.Google Scholar
- Luryi, S. and Kastalsky, A. (1985b) Physica 134 B, 453.Google Scholar
- Luryi, S. and Sze, S. M. (1987) in Silicon Molecular Beam Eptitaxy, ed. by E. Kasper and J. C. Bean (CRC Uniscience Press, inc.), to be published.Google Scholar
- Malik R. J., Hollis, M. A., Eastman, L. F., Woodard, D. W., Wood, C. E. C., and AuCoin, T. R. (1981) Proc. 8th Biennial Conf. on Active Microwave Semicond. Devices and Circuits, Cornell University.Google Scholar
- Sze, S. M. (1969) Physics of Semiconductor Devices, 1st edition (Wiley, New York), Chap. 11.Google Scholar