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Si/Ge Multilayered Structures

  • E. Kasper
  • H. J. Herzog
  • F. Schäffler

Abstract

Molecular Beam Epitaxy (MBE) /1, 2/ is a straightforward and powerful tool for creating semiconductor structures with novel physical properties. Besides homoepitaxy, which provides doping profiles of almost arbitrary shape, MBE heteroepitaxy appears as an extremely promising technique that allows the single crystalline growth of semiconductor structures consisting of more than one material. Early attempts were mainly limited to lattice matched semiconductors (especially GaAs/GayAl1_yAs) and led to a large variety of new physical effects (e.g. the fractional quantum Hall effect /3/) and device applications (e.g. the high electron mobility transistor (HEMT) /2./).Meanwhile, increasing effort is dedicated to the growth of heterostructures consisting of materials with a more or less pronounced mismatch between their lattice constants. This general kind of heteroepitaxy is not restricted to semiconductor/semiconductor junctions /4–6/ but has also been applied to epitaxial semiconductor/insulator /7/ and semiconductor/metal /8/ junctions. In the following, we will discuss physical properties and some device applications for the case of SiGe heterostructures. This system is of particular interest, since it will allow monolithic integration of novel SiGe-based devices together with proven Si large scale integrated circuits, which might replace many of the present hybrid devices.

Keywords

Buffer Layer Molecular Beam Epitaxy High Electron Mobility Transistor Molecular Beam Epitaxy Growth SiGe Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • E. Kasper
    • 1
  • H. J. Herzog
    • 1
  • F. Schäffler
    • 1
  1. 1.AEG Research Center, UlmUlmGermany

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